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MBR140SFT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 6
1 Publication Order Number:
MBR140SFT1/D
MBR140SF, NRVB140SF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Rating:
♦ Human Body Model = 3B
♦ Machine Model = C
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Device Marking: L4F
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Package Shipping
†
ORDERING INFORMATION
SOD−123FL
CASE 498
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MARKING DIAGRAM
L4F = Specific Device Code
M = Date Code
G = Pb−Free Package)
L4FMG
G
MBR140SFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
MBR140SFT1G SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
(Note: Microdot may be in either location)
NRVB140SFT1G SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
NRVB140SFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
MBR140SF, NRVB140SF
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current (At Rated V
R
, T
L
= 112°C) I
O
1.0 A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
L
= 95°C)
I
FRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
30
A
Storage Temperature T
stg
−55 to 150 °C
Operating Junction Temperature T
J
−55 to 125 °C
Voltage Rate of Change (Rated V
R
, T
J
= 25°C) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
V
F
T
J
= 25°C T
J
= 85°C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
0.36
0.55
0.85
0.30
0.515
0.88
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
I
R
T
J
= 25°C T
J
= 85°C
mA
(V
R
= 40 V)
(V
R
= 20 V)
0.5
0.15
25
18
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
MBR140SF, NRVB140SF
http://onsemi.com
3
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS
)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.1
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.70.3 0.5 0.9
T
J
= 85°C
T
J
= 125°C
T
J
= −40°C
T
J
= 25°C
100
0.1
10
1.0
0.1
0.70.3 0.5 0.
9
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
I
R
, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
400
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
1.0E−3
100E−6
10E−6
1.0E−6
V
R
, REVERSE VOLTAGE (VOLTS)
10 20 30
4
0
0
1.0E+0
100E−6
10E−6
10 20 30
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
100E−3
10E−3
1.0E−3
P
FO
, AVERAGE POWER DISSIPATION (WATTS
)
I
pk
/I
o
= 5
Figure 5. Current Derating
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.20
1.0
0.6
0.5
0.3
0.1
0
1.00.4 0.8 1.2 1
.6
0.4
SQUARE
WAVE
dc
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
0.6 1.4
0.2
0.7
0.8
0.9
Figure 6. Forward Power Dissipation
I
O
, AVERAGE FORWARD CURRENT (AMPS)
I
pk
/I
o
= 5
T
L
, LEAD TEMPERATURE (°C)
3525
1.8
1
0.8
0.4
0.2
0
7545 65 85 125
0.6
SQUARE
WAVE
dc
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
55 115
1.2
1.4
1.6
95 105
freq = 20 kHz
P1-P3P4-P5

MBR140SFT3G

Mfr. #:
Buy MBR140SFT3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 40V
Lifecycle:
New from this manufacturer.
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