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Document Number: 71402
S11-0303-Rev. C, 28-Feb-11
Vishay Siliconix
DG300B, DG301B, DG302B, DG303B
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
IN
= 0.8 V or V
IN
= 4 V
f
Temp.
b
Limits
- 40 °C to 85 °C
Unit Min.
d
Typ.
c
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 V
Drain-Source On-Resistance
R
DS(on)
V
D
= ± 10 V, I
S
= - 10 mA
Room
Full
30
50
75
Source Off Leakage Current
I
S(off)
V
S
= ± 14 V, V
D
= ± 14 V
Room
Hot
- 5
- 100
± 0.1
5
100
nADrain Off Leakage Current
I
D(off)
Room
Hot
- 5
- 100
± 0.1
5
100
Drain On Leakage Current
I
D(on)
V
S
= V
D
= ± 14 V
Room
Hot
- 5
- 100
± 0.1
5
100
Digital Control
Input Current with
Input Voltage High
I
INH
V
IN
= 5 V
Room
Full
- 1 - 0.001
µA
V
IN
= 15 V
Room
Full
0.001 1
Input Current with
Input Voltage Low
I
INL
V
IN
= 0 V
Room
Full
- 1 - 0.001
Dynamic Characteristics
Tur n - On T im e
t
ON
see figure 2
Room 150
ns
Turn-Off Time
t
OFF
Room 130
Break-Before-Make Time
t
OPEN
DG301B, DG303B Only
figure 3
Room 50
Charge Injection Q
C
L
= 1 nF, R
gen
= 0 , V
gen
= 0 V
figure 4
Room 8 pC
Source Off Capacitance
C
S(off)
V
S
, V
D
= 0 V, f = 1 MHz
Room 14
pF
Drain Off Capacitance
C
D(off)
Room 14
Channel-On Capacitance
C
D(on)
Room 40
Input Capacitance
C
in
f = 1 MHz
V
IN
= 0 V
Room 6
V
IN
= 15 V
Room 7
Off Isolation OIRR
V
IN
= 0 V, R
L
= 1 k
V
S
= 1 V
rms
, f = 500 kHz
Room 62
dB
Crosstalk (Channel-to-Channel)
X
TA LK
Room 74
Power Supplies
Positive Supply Current I+
V
IN
= 4 V (one input)
all others = 0 V
Room
Full
0.23 1
mA
Negative Supply Current I-
Room
Full
- 100 - 0.001
µAPositive Supply Current I+
V
IN
= 0.8 V (all inputs)
Room
Full
0.001 100
Negative Supply Current I-
Room
Full
- 100 - 0.001
Document Number: 71402
S11-0303-Rev. C, 28-Feb-11
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5
Vishay Siliconix
DG300B, DG301B, DG302B, DG303B
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
R
DS(on)
vs. V
D
and Power Supply
R
DS(on)
vs. V
D
and Power Supply Voltage
Charge Injection vs. Analog Voltage
R
DS(on)
-
V
D
- Drain Voltage (V)
90
-25 -15 -5 5 15 25
70
50
30
10
± 5 V
T
A
= 25 °C
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
R
DS(on)
V
D
- Drain Voltage (V)
0 5 10 15 20
20
V- = 0 V
T
A
= 25 °C
40
60
80
100
7.5 V
10 V
15 V
20 V
-
Q (pC)
V
S
- Source Voltage (V)
50
- 15 - 10 - 5 0 5 10 15
40
30
20
10
0
V+ = 15 V
V- = - 15 V
C
L
= 1 nF
R
DS(on)
vs. V
D
and Temperature
Switching Time and Break-Before-Make Time
vs. Positive Supply Voltage
Input Switching Threshold
vs. Positive Supply Voltage
R
DS(on)
-
V
D
- Drain Voltage (V)
60
-15 -10 -5 0 5 10 15
50
40
30
20
10
V+ = 15 V
V- = - 15 V
T
A
= 125 °C
T
A
= 25 °C
T
A
= - 55 °C
(ns)t
ON
,t
OFF
V+ - Positive Supply (V)
500
0 5 10 15
400
300
200
100
0
DG301B, DG303B only
t
OPEN
t
OFF
t
ON
V- = - 15 V
T
A
= 25 °C
V
INH
= 4 V
V
INL
= 0 V
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Document Number: 71402
S11-0303-Rev. C, 28-Feb-11
Vishay Siliconix
DG300B, DG301B, DG302B, DG303B
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Supply Current vs. Temperature
Supply Curents vs. Switching Frequency
Switching Time vs. Power Supply Voltage
Temperature (°C)
I+, I- (µA)
- 55 - 35 - 15 5 25 45 65 85 105 125
500
400
300
200
100
0
- 100
I+
V+ = 15 V
V- = - 15 V
V
IN
= 4 V (one input)
(all other = 0 V)
f - Frequency (Hz)
I+, I- (mA)
15
0
+ I
-I
V+ = 15 V
V- = - 15 V
5
10
1 k 10 k 100 k 1 M
10
Supply Voltage (V)
Time (ns)
400
350
300
250
200
150
100
50
0
t
OFF
t
ON
12 14 16 18 20 22
Off Isolation and Crosstalk vs. Frequency
Leakage vs. Temperature
Switching Time vs. Temperature
f - Frequency (Hz)
(dB)
- 120
-20
10 k 100 k 1 M 10 M
V+ = +15 V
V- = - 15 V
R
L
Crosstalk
Off Isolation
- 100
-80
-60
-40
Temperature (°C)
I
S
- 55 - 35 - 15 5 25 45 65 85 105 125
V+ = 15 V
V- = - 15 V
V
S
, V
D
= ± 14 V
10 pA
I
D(on)
I
D(off)
or I
S(off)
100 pA
1 nA
10 nA
100 nA
, I
D
Temperature (°C)
-55
400
350
300
250
200
150
100
50
- 35 - 15 5 25 45 65 85 105 125
0
t
OFF
t
ON
V+ = 15 V
V- = - 15 V
V
S
= 3 V
Time (ns)

DG303BDY-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs ANALOGUE SWITCH IC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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