STPS1545CG-TR Datasheet STPS1545CG-TR, STPS1545CR, STPS1545CG | P1-P3

February 2016

DocID3503 Rev 8

1/13

This is information on a product in full production.

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STPS1545C

Power Schottky rectifier

Datasheet - production data

Features

 Very small conduction losses

 Negligibile switching losses

 Extremely fast switching

 Avalanche capability specified

 ECOPACK

®

2 compliant component for

D²PAK on demand

Description

Dual center tap Schottky rectifier suited for switch

mode power supply and high frequency DC to

DC converters.

Packaged either in TO-220AB and D

2

PAK, this

device is especially intended for use in low

voltage, high frequency inverters, free wheeling

and polarity protection applications.

Table 1: Device summary

Symbol

Value

I

F(AV)

2 x 7.5 A

V

RRM

45 V

T

j

(max)

175 °C

V

F

(typ)

0.5 V

K

A1

A2

D

2

PAK

A1

K

A2

A1

K

A2

TO-220AB

A1

K

A2

I

2

PAK

K

Characteristics

STPS1545C

2/13

DocID3503 Rev 8

1 Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

45

V

I

F(RMS)

Forward rms current

20

A

I

F(AV)

Average forward current

δ = 0.5, square wave

T

C

= 157 °C

Per diode

7.5

A

I

FSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal

150

A

P

ARM

Repetitive peak

avalanche power

t

p

= 10 µs, T

j

= 125 °C

190

W

T

stg

Storage temperature range

-65 to + 175

°C

T

j

Maximum operating junction temperature

(1)

+ 175

°C

Notes:

(1)

(dP

tot

/dT

j

) < (1/R

th(j-a)

) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Value

Unit

R

th(j-c)

Junction to case

Per diode

3.0

°C/W

Total

1.7

R

th(c)

Coupling

-

0.35

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔT

j (diode1)

= P

(diode1)

x R

th(j-c)

(per diode) + P

(diode2)

x R

th(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

-

100

µA

T

j

= 125 °C

-

5

15

mA

V

F

(1)

Forward voltage drop

T

j

= 125 °C

I

F

= 7.5 A

-

0.5

0.57

V

T

j

= 25 °C

I

F

= 15 A

-

0.84

T

j

= 125 °C

I

F

= 15 A

-

0.65

0.72

Notes:

(1)

Pulse test: t

p

= 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.42 x I

F(AV)

+ 0.020 I

F

2

(RMS)

STPS1545C

Characteristics

DocID3503 Rev 8

3/13

1.1 Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

P (W)

F(AV)

0

1

2

3

4

5

6

T

δ

=tp/T

tp

I (A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

0 1 2 3 4 5 6 7 8 9 10

0 25 50 75 100 125 150 175

0

1

2

3

4

5

6

7

8

9

I (A)

F(AV)

R =R

th(j-a) th(j-c)

R =15°C/W

th(j-a)

R =40°C/W

th(j-a)

T (°C)

amb

T

δ

=tp/T

tp

P (t

p

)

P (10 µs)

ARM

0.001

0.01

0.1

1

1 10 100 1000

t (µs)

p

1E-4 1E-3 1E-2 1E-1 1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z /R

th(j-c) th(j-c)

T

δ

=tp/T

tp

t (s)

p

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

0 5 10 15 20 25 30 35 40 45

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

5E+4

I (µA)

R

V (V)

R

T =125°C

j

T =150°C

j

T =100°C

j

T =25°C

j

T =50°C

j

T =75°C

j

1 2 5 10 20 50

100

200

500

1000

C(pF)

V (V)

R

F=1MHz

V =30mV

T =25°C

OS C RMS

j

STPS1545CG-TR

STPS1545CG-TR

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