February 2007 Rev 8 1/14
14
STP16NF06
STP16NF06FP
N-channel 60V - 0.08 - 16A - TO-220/TO-220FP
STripFET™ II Power MOSFET
General features
Exceptional dv/dt capability
Low gate charge at 100°C
Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STP16NF06 60V <0.1 16A
STP16NF06FP 60V <0.1 11A
1
2
3
TO-220FP
TO-220
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STP16NF06 P16NF06 TO-220 Tube
STP16NF06FP P16NF06 TO-220FP Tube
Contents STP16NF06 - STP16NF06FP
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STP16NF06 - STP16NF06FP Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
TO-220 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 60 V
V
GS
Gate- source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 16 11
(1)
1. Current limited by package’s thermal resistance
A
I
D
Drain current (continuous) at T
C
= 100°C 11 7.5
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 64 44
(1)
A
P
tot
Total dissipation at T
C
= 25°C 45 25 W
Derating factor 0.3 0.17 W/°C
dv/dt
(3)
3. I
SD
16A, di/dt 200A/µs, V
DD
V
(BR)DSS
, Tj T
JMAX
Peak diode recovery voltage slope 20 V/ns
E
AS
(4)
4. Starting T
j
= 25 °C, I
D
= 8A, V
DD
= 30V
Single pulse avalanche energy 130 mJ
I
AR
Avalanche current, repetitive or not-
repetitive
16 A
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
stg
Storage temperature
-55 to 175 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max 3.33 6 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C

STP16NF06

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 16 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet