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BUT90

P1-P3P4-P4
BUT90
HIGH POWER NPN SILICON TRANSISTOR
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGGEDNESS
■ LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
■ UNINTERRUPTABLE POWER SUPPLY
■ MOTOR CONTROL
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUT90 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
®
INTERNAL SCHEMATIC DIAGRAM
February 2003
1
2
TO-3
(version "S")
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5 V) 200 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 125 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 10 V
I
C
Collector Current 50 A
I
CM
Collector Peak Current (t
p
= 10 ms) 120 A
I
B
Base Current 12 A
I
BM
Base Peak Current (t
p
= 10 ms) 32 A
P
tot
Total Power Dissipation at T
case
≤ 25
o
C
250 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max Operating Junction Temperature 200
o
C
1/4
Obsolete Product(s) - Obsolete Product(s)
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
Collector Cut-off
Current (R
BE
= 10 Ω)
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
0.4
4
mA
mA
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
0.2
2
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 7 V 1 mA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 0.2 A L = 25 mH 125 V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 50 mA 10 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 35 A I
B
= 1.75 A
I
C
= 70 A I
B
= 7 A
I
C
= 35 A I
B
= 1.75 A T
c
= 100
o
C
I
C
= 70 A I
B
= 7 A T
c
= 100
o
C
0.55
0.8
0.75
1.2
0.9
0.9
1.2
1.5
V
V
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 35 A I
B
= 1.75 A
I
C
= 70 A I
B
= 7 A
I
C
= 35 A I
B
= 1.75 A T
c
= 100
o
C
I
C
= 70 A I
B
= 7 A T
c
= 100
o
C
1
1.45
1
1.65
1.3
1.8
1.4
2
V
V
V
V
RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
V
CC
= 100 V I
c
= 70 A
I
B1
= - I
B2
= 7 A t
p
= 30 µs
0.8
0.9
0.2
1.2
1.5
0.4
µs
µs
µs
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
V
CC
= 100 V I
c
= 70 A
I
B1
= - I
B2
= 7 A t
p
= 30 µs
T
j
= 100
o
C
1.1
1.2
0.3
1.6
2
0.6
µs
µs
µs
INDUCTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
s
t
f
Storage Time
Fall Time
V
CC
= 100 V V
Clamp
= 125 V
I
C
= 70 A I
B1
= - I
B2
= 7 A
L
C
= 70 µH
1.25
0.16
2
0.3
ms
µs
t
s
t
f
Storage Time
Fall Time
V
CC
= 100 V V
Clamp
= 125 V
I
C
= 70 A I
B1
= - I
B2
= 7 A
L
C
= 70 µH T
j
= 100
o
C
1.5
0.25
2.3
0.5
µs
µs
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
BUT90
2/4
Obsolete Product(s) - Obsolete Product(s)
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 1.47 1.60 0.058 0.063
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003O
TO-3 (version S) MECHANICAL DATA
BUT90
3/4
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P4

BUT90

Mfr. #:
Buy BUT90
Manufacturer:
TT Electronics
Description:
Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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