IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTQ470P2
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 23 36 S
C
iss
5400 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 545 pF
C
rss
44 pF
t
d(on)
23 ns
t
r
12 ns
t
d(off)
42 ns
t
f
9 ns
Q
g(on)
88 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
30 nC
Q
gd
31 nC
R
thJC
0.15 °C/W
R
thCS
0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 42 A
I
SM
Repetitive, Pulse Width Limited by T
JM
168 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
400 ns
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
I
F
= 21A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
