PIN NAME FUNCTION
1IN
Input. IN is the power input for the OVP charge pump. Bypass IN to GND with a 1µF or larger
capacitor.
2 EN
Active-Low Enable Input. Drive EN high to turn off the external MOSFET. Driving EN low activates
the OVP circuitry and turns on the external MOSFET.
3 GATE
Gate Drive Output. GATE is the output of an on-chip OVP charge pump. When V
UVLO
< V
IN
<
V
OVLO
, GATE is driven high to turn on the external n-channel MOSFET.
4 BTA
Internal Current-Limited Switch Terminal. Connect BTA to the source of the external n-channel
MOSFET. BTA is the power input for the entire device (except the OVP charge pump). Bypass BTA
to GND with a 0.1µF capacitor as close to the device as possible for proper operation.
5CB
Active-Low Internal Current-Limited-Switch Control Input. Drive CB high to turn on the internal
switch, pull CB low to turn off the internal switch.
6 GND Ground
7 BTB
Internal Current-Limited-Switch Output. Bypass BTB to GND with 0.1µF capacitor as close to the
device as possible.
8 FLAGI
Active-Low Open-Drain Internal Current-Limited Flag Output. FLAGI asserts low when the current
is at the limit for longer than the blanking time. FLAGI is disabled when EN goes high.
9 N.C. No Connection. Not internally connected.
10 OV
Active-Low Open-Drain IN-Overvoltage Flag Output. OV goes low when an
undervoltage/overvoltage fault occurs at IN. OV is disabled when EN goes high.
— EP
Exposed Pad. EP is internally connected to GND. Correct EP to a large ground plane to act as a
heat sink, but do not use EP as the only electrical ground connection.
