Characteristics STPS40M120C
2/9 Doc ID 022916 Rev 1
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values per diode at T
amb
= 25 °C, unless
otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 120 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current, δ = 0.5
Per diode T
c
= 130 °C 20
A
Per device T
c
= 120 °C 40
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 220 A
P
ARM
(1)
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Repetitive peak avalanche power T
j
= 125 °C, t
p
= 10 µs 1600 W
V
ARM
(2)
2. See Figure 9
Maximum repetitive peak
avalanche voltage
t
p
< 10 µs, T
j
< 125 °C, I
AR
< 10.7 A 150 V
V
ASM
(2)
Maximum single-pulse
peak avalanche voltage
t
p
< 10 µs, T
j
< 125 °C, I
AR
< 10.7 A 150 V
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(3)
3. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1.10
°C/WTot al 0 .80
R
th(c)
Coupling 0.50
dPtot
dTj
<
1
Rth(j-a)