Characteristics STPS30H100DJF
2/8 Doc ID 023024 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.60 x I
F(AV)
+ 0.00367 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, anode terminals short circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 45 A
I
F(AV)
Average forward current δ = 0.5 T
c
= 100 °C 30 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 250 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs, T
j
= 25 °C 3700 W
V
ARM
Maximum repetitive peak avalanche
voltage
t
p
< 1 µs, T
j
< 150 °C
I
AR
< 9.3A
120 V
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 2 °C/W
Table 4. Static electrical characteristics (anode terminals short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
=V
RRM
--6µA
T
j
= 125 °C - 2.5 6.5 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 15 A
- - 0.76
V
T
j
= 125 °C - 0.56 0.62
T
j
= 25 °C
I
F
= 30 A
- - 0.84
T
j
= 125 °C - 0.63 0.71
dPtot
dTj
<
1
Rth(j-a)
