NTMFS4836N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
t
r
t
d(off)
t
d(on)
t
f
V
GS
15 0 10 15
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
3500
0
V
GS
V
DS
55
T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
0
4
0
Q
G
, TOTAL GATE CHARGE (nC)
2
8
30
I
D
= 30 A
T
J
= 25°C
Q
T
35
0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
1 10 100
1000
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.5 0.6
5
10
15
1
V
DS
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
0.7 0.8
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 22 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75
60
100 125
100
260
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
150
500
20
30
5000
3000
2500
1500
1000
0.4 1.1
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
2010 25 4540
Q
gs
160
180
12
4500
10
Q
gd
0.1
40
80
120
140
10 25
2000
4000
155
20
18
16
14
12
10
8
6
4
2
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
10
0.9 1.0
200
220
240
