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SUP90P06-09L-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
Vishay Siliconix
SUP90P06-09L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
V
GS
= 10 V
I
D
= 30 A
R
)no(SD
-e c n a t s i s e R - n O
)dezilamroN(
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs.
Junction Temperature
0.0 0.3 0.6 0.9 1.2
V
SD
- Source-to-Drain Voltage (V)
-) A ( t n e r r u C e c r u o S I
S
100
10
1
T
J
= 25 °C
T
J
= 150 °C
56
60
64
68
72
76
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
)V(
V
SD
I
D
= 10 mA
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
www.vishay.com
5
Vishay Siliconix
SUP90P06-09L
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73010
.
Maximum Avalanche and Drain Current
vs. Case Temperature
0
50
100
150
200
0 25 50 75 100 125 150 175
T
C
- Case Temperature (°C)
-)A( tnerruC niarD I
D
Limited
by Package
Safe Operating Area
1000
1
0.1 1 10 100
0.1
10
-)A( tnerruC niarD I
D
T
C
= 25 °C
Single Pulse
100
1 ms
10 µs
100 µs
10 ms
100 ms, DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R *
DS(on)
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
e v
i
t
c e f f
E
d e z
i
l
a
m
r
o
N
t n
e
i s n
a
r
T
e c n a d e p
m I
l a m r
e
h
T
1
0.2
0.1
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.05
0.02
Single Pulse
Package Information
www.vishay.com
Vishay Siliconix
Revison: 16-Jun-14
1
Document Number: 71195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220AB
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
D2
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
D2 12.19 12.70 0.480 0.500
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
P1-P3P4-P6P7-P7

SUP90P06-09L-E3

Mfr. #:
Buy SUP90P06-09L-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 90A 250W 9.3mohm @ 10V
Lifecycle:
New from this manufacturer.
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