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SIR876DP-T1-GE3

P1-P3P4-P6P7-P7
Vishay Siliconix
SiR876DP
Document Number: 65934
S10-2684-Rev. B, 22-Nov-10
www.vishay.com
1
New Product
N-Channel 100 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
• Industrial
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a
Q
g
(Typ.)
100
0.0108 at V
GS
= 10 V
40
16.9 nC
0.0114 at V
GS
= 7.5 V
40
0.0145 at V
GS
= 4.5 V
40
Ordering Information: SiR876DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK
®
SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
40
a
A
T
C
= 70 °C
40
a
T
A
= 25 °C
15.2
b, c
T
A
= 70 °C
12.1
b, c
Pulsed Drain Current
I
DM
80
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
40
a
T
A
= 25 °C
4.5
b, c
Single Pulse Avalanche Current
L =0.1 mH
I
AS
25
Single Pulse Avalanche Energy
E
AS
31.2
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
62.5
W
T
C
= 70 °C
40
T
A
= 25 °C
5.0
b, c
T
A
= 70 °C
3.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 10 s
R
thJA
20 25
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.6 2.0
www.vishay.com
2
Document Number: 65934
S10-2684-Rev. B, 22-Nov-10
Vishay Siliconix
SiR876DP
New Product
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 100 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
47
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 5.6
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 1.2 2.8 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V 1
µA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C 10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A 0.0087 0.0108
V
GS
= 7.5 V, I
D
= 15 A 0.0092 0.0114
V
GS
= 4.5 V, I
D
= 10 A 0.0115 0.0145
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 20 A 57 S
Dynamic
b
Input Capacitance C
iss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
1640
pFOutput Capacitance C
oss
960
Reverse Transfer Capacitance C
rss
60
Total Gate Charge Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A 31.8 48
nC
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 10 A 25 37.5
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 10 A
16.9 25.5
Gate-Source Charge Q
gs
4.8
Gate-Drain Charge Q
gd
7.9
Gate Resistance R
g
f = 1 MHz 0.8 3.6 7.2
Tur n - O n D e l ay Time t
d(on)
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
11 22
ns
Rise Time t
r
918
Turn-Off Delay Time t
d(off)
36 70
Fall Time t
f
11 22
Tur n - O n D e l ay Time t
d(on)
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
12 24
Rise Time t
r
14 28
Turn-Off Delay Time t
d(off)
35 70
Fall Time t
f
10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C 40
A
Pulse Diode Forward Current
a
I
SM
80
Body Diode Voltage V
SD
I
S
= 4 A 0.76 1.1 V
Body Diode Reverse Recovery Time t
rr
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
52 100 ns
Body Diode Reverse Recovery Charge Q
rr
65 120 nC
Reverse Recovery Fall Time t
a
22
ns
Reverse Recovery Rise Time t
b
30
Vishay Siliconix
SiR876DP
Document Number: 65934
S10-2684-Rev. B, 22-Nov-10
www.vishay.com
3
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
0 0.5 1.0 1.5 2.0 2.5
16
32
48
64
80
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
V
GS
= 4 V
V
GS
= 10 V thru 5 V
V
GS
= 3 V
0.006
0 1632486480
0.008
0.010
0.012
0.014
0.016
I
D
- Drain Current (A)
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
V
GS
= 7.5 V
V
GS
= 10 V
0 7 14 21 28 35
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge
0
2
4
6
8
10
I
D
= 10 A
V
DS
= 75 V
V
DS
= 25 V
V
DS
= 50 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
012345
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125 °C
0
0 20406080100
600
1200
1800
2400
3000
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0.5
- 50 - 25 25 75 1250 50 100 150
0.8
1.4
1.1
1.7
2.0
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 20 A
V
GS
= 10 V
V
GS
= 4.5 V
P1-P3P4-P6P7-P7

SIR876DP-T1-GE3

Mfr. #:
Buy SIR876DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIR876ADP-T1-GE3
Lifecycle:
New from this manufacturer.
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