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PSMN3R3-80PS,127

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PSMN3R3-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 27 October 2011 6 of 15
NXP Semiconductors
PSMN3R3-80PS
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V; T
j
= -55 °C 73 - - V
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 80--V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--4.6V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
234V
I
DSS
drain leakage current V
DS
=80V; V
GS
=0V; T
j
= 25 °C - 0.02 10 µA
V
DS
=80V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
= 175 °C;
see Figure 12
-6.77.9mΩ
V
GS
=10V; I
D
=25A; T
j
= 100 °C;
see Figure 12
-4.65.4mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 13
[1]
-2.83.3mΩ
R
G
internal gate resistance (AC) f = 1 MHz - 0.9 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=0A; V
DS
=0V; V
GS
= 10 V - 135 - nC
I
D
=75A; V
DS
=40V; V
GS
=10V;
see Figure 14
; see Figure 15
- 139 - nC
Q
GS
gate-source charge - 51 - nC
Q
GS(th)
pre-threshold gate-source
charge
-30-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-21-nC
Q
GD
gate-drain charge - 27 - nC
V
GS(pl)
gate-source plateau voltage I
D
=25A; V
DS
=40V;
see Figure 14
; see Figure 15
-5.8-V
C
iss
input capacitance V
DS
=40V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 16
- 9961 - pF
C
oss
output capacitance - 847 - pF
C
rss
reverse transfer capacitance - 401 - pF
t
d(on)
turn-on delay time V
DS
=40V; R
L
=0.53Ω;
V
GS
=10V; R
G(ext)
=10Ω; I
D
=75A
-41-ns
t
r
rise time - 43 - ns
t
d(off)
turn-off delay time - 109 - ns
t
f
fall time - 44 - ns
PSMN3R3-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 27 October 2011 7 of 15
NXP Semiconductors
PSMN3R3-80PS
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
[1] Measured 3 mm from package.
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
-0.81.2V
t
rr
reverse recovery time I
S
=25A; dI
S
/dt = 100 A/µs;
V
GS
=0V; V
DS
=20V
-63-ns
Q
r
recovered charge - 121 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aaf602
0
50
100
150
200
250
0 20406080
I
D
(A)
g
fs
(S)
003aaf603
0
25
50
75
0246
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aaf606
0
4000
8000
12000
16000
10
-1
1 10 10
2
V
GS
(V)
C
(pF)
C
iss
C
rss
PSMN3R3-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 27 October 2011 8 of 15
NXP Semiconductors
PSMN3R3-80PS
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
Fig 9. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
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PSMN3R3-80PS,127

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Manufacturer:
Nexperia
Description:
MOSFET N-Ch 80V 3.3 m std level MOSFET
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New from this manufacturer.
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