MKI50-06A7

1 - 4© 2011 IXYS All rights reserved
20110119a
MKI 50-06 A7
MKI 50-06 A7T
IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.
Features
• NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IGBTs
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 600 V
V
GES
±
20 V
I
C25
T
C
= 25°C 72 A
I
C80
T
C
= 80°C 50 A
RBSOA V
GE
=
±
15 V; R
G
= 22 Ω; T
VJ
= 125°C I
CM
= 100 A
Clamped inductive load; L = 100 µH V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 22 Ω; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 225 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C 1.9 2.4 V
T
VJ
= 125°C 2.2 V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.6 mA
T
VJ
= 125°C 0.7 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
50 ns
t
r
60 ns
t
d(off)
300 ns
t
f
30 ns
E
on
2.3 mJ
E
off
1.7 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 2800 pF
Q
Gon
V
CE
= 300V; V
GE
= 15 V; I
C
= 50 A 120 nC
R
thJC
(per IGBT) 0.55 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 50 A
V
GE
=
±
15 V; R
G
= 22 Ω
I
C25
=72A
V
CES
= 600 V
V
CE(sat) typ.
= 1.9 V
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
Type NTC - Option
MKI 50-06 A7 without NTC
MKI 50-06 A7T with NTC
13
17
1
2
3
4
9
10
11
12
16
14
T1
D1
T2
D2
T5
D5
T6
D6
T
T
2 - 4© 2011 IXYS All rights reserved
20110119a
MKI 50-06 A7
MKI 50-06 A7T
Diodes
Symbol Conditions Maximum Ratings
I
F25
T
C
= 25°C 72 A
I
F80
T
C
= 80°C 45 A
Characteristic Values
min. typ. max.
V
F
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C 1.6 1.8 V
T
VJ
= 125°C 1.3 V
I
RM
I
F
= 30 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C 25 A
t
rr
V
R
= 300 V; V
GE
= 0 V 90 ns
R
thJC
(per diode) 1.19 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.82 V; R
0
= 28 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 0.89 V; R
0
= 8 m
Ω
Thermal Response
IGBT (typ.)
C
th1
= 0.201 J/K; R
th1
= 0.42 K/W
C
th2
= 1.252 J/K; R
th2
= 0.131 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.116 J/K; R
th1
= 0.973 K/W
C
th2
= 0.88 J/K; R
th2
= 0.277 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
-40...+150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
1 mA; 50/60 Hz 2500 V~
M
d
Mounting torque (M5) 2.7 - 3.3 Nm
Characteristic Values
min. typ. max.
R
pin-chip
5mΩ
d
S
Creepage distance on surface 6 mm
d
A
Strike distance in air 6 mm
R
thCH
with heatsink compound 0.02 K/W
Weight 180 g
Temperature Sensor NTC (MKI ... A7T version only)
Symbol Conditions Characteristic Values
min. typ. max.
R
25
T = 25°C 4.75 5.0 5.25 kΩ
B
25/50
3375 K
Dimensions in mm
(1 mm = 0.0394")
0 255075100125150
100
1000
10000
MUBW2006A7
T
C
Ω
R
Typ. thermistor resistance versus
temperature
3 - 4© 2011 IXYS All rights reserved
20110119a
MKI 50-06 A7
MKI 50-06 A7T
0 200 400 600 800 1000
0
10
20
30
40
50
0
30
60
90
120
150
0123456
0
30
60
90
120
150
0 40 80 120 160
0
5
10
15
20
0123456
0
30
60
90
120
150
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 300V
I
C
= 50A
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/μs
MWI5006A7
T
VJ
= 125°C
V
R
= 300V
I
F
= 30A
I
RM
t
rr
9V
11V
V
GE
= 17V
15V
13V
A
9V
11V
V
GE
= 17V
15V
13V
A
4 6 8 10 12 14 16
0
30
60
90
120
150
V
CE
= 20V
V
V
GE
A
I
C
T
VJ
= 25°C
T
VJ
= 125°C
0.0 0.5 1.0 1.5 2.0
0
15
30
45
60
75
90
V
V
F
I
F
T
VJ
= 25°CT
VJ
= 125°C
A
ns
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode

MKI50-06A7

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Modules 50 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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