Symbol Min Typ Max Units
800
900
BV
DSS
/∆TJ
0.86
V/
o
C
1
10
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
3.3 3.9 4.5 V
R
DS(ON)
1.35 1.63 Ω
g
FS
9 S
V
SD
0.72 1 V
I
S
Maximum Body-Diode Continuous Current 7.4 A
I
SM
26 A
C
iss
1100 1375 1650 pF
C
oss
70 101 132 pF
C
rss
6 11 16 pF
R
g
1.7 3.5 5.3 Ω
Q
g
20 26 32 nC
Q
gs
7.3 nC
Q
gd
9.1 nC
t
D(on)
35 ns
t
r
51 ns
t
D(off)
69 ns
t
f
41 ns
t
rr 380 484 585 ns
Q
rr 4.5 6 7.5
µC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=640V, I
D
=8A
Gate Source Charge
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=4A
Body Diode Reverse Recovery Charge
I
F
=8A,dI/dt=100A/µs,V
DS
=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-Off DelayTime
V
GS
=10V, V
DS
=400V, I
D
=8A,
R
G
=25Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Turn-On Rise Time
Body Diode Reverse Recovery Time
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=5V,
I
D
=250µA
V
DS
=640V, T
J
=125°C
Breakdown Voltage Temperature
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
DS
=800V, V
GS
=0V
BV
DSS
I
D
=250µA, V
GS
=0V
µA
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage
I
F
=8A,dI/dt=100A/µs,V
DS
=100V
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=4A
Forward Transconductance
Diode Forward Voltage
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=3.8A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
Rev1.0: Sepetember 2017 www.aosmd.com Page 2 of 6
