IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
www.vishay.com
Vishay Siliconix
S13-0169-Rev. D, 04-Feb-13
1
Document Number: 90350
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface Mountable (Order As IRFR9020,
SiHFR9020)
• Straight Lead Option (Order As IRFU9020,
SiHFU9020)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of power
MOSFET’s to high volume applications where PC board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
b. V
DD
= - 25 V, Starting T
J
= 25 °C, L = 5.1 mH, R
g
= 25 , Peak I
L
= - 9.9 A
c. I
SD
- 9.9 A, dI/dt -120 A/μs, V
DD
40 V, T
J
150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) - 50
R
DS(on)
()V
GS
= - 10 V 0.28
Q
g
(Max.) (nC) 14
Q
gs
(nC) 6.5
Q
gd
(nC) 6.5
Configuration Single
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9020-GE3 SiHFR9020TR-GE3
a
SiHFR9020TRL-GE3
a
SiHFU9020-GE3
Lead (Pb)-free
IRFR9020PbF IRFR9020TRPbF
a
IRFR9020TRLPbF
a
IRFU9020PbF
SiHFR9020-E3 SiHFR9020T-E3
a
SiHFR9020TL-E3
a
SiHFU9020-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 50
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
- 9.9
AT
C
= 100 °C - 6.3
Pulsed Drain Current
a
I
DM
- 40
Linear Derating Factor 0.33 W/°C
Single Pulse Avalanche Energy
b
E
AS
250 mJ
Repetitive Avalanche Current
a
I
AR
- 9.9 A
Repetitive Avalanche Energy
a
E
AR
4.2 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
42 W
Peak Diode Recovery dV/dt
c
dV/dt 5.8 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
