OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MASW-011071

P1-P3P4-P6
20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Rev. V1
MASW-011071
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
Features
Low Insertion Loss: 1 dB
High Isolation: 38 dB
Integrated Bias Network and Termination Circuit
Greater than 20 W CW Power Handling @ +70°C
Lead-Free 7 mm 44-lead PQFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Description
The MASW-011071 is a terminated silicon PIN diode
SPDT switch designed for X-Band high power, high
performance applications. The switch is assembled
in a lead-free 7 mm 44-lead PQFN plastic package
and handles greater than 20 W of CW power over
the 8.0 - 10.5 GHz frequency band.
The device is fabricated using MACOM’s patented
HMIC process, which allows for the integration of
silicon pedestals that embed series and shunt
diodes in low loss, low dispersion glass. The switch
offers 1 dB insertion loss as well as 38 dB isolation
performance. The device integrates a bias network
to allow for simplified bias application and switch
control.
Pin Configuration
Pin Function Port
7 RF
OUT
J2
12 Bias of J2 B2
17 RF
COMMON
J1
22 Bias of J3 B3
27 RF
OUT
J3
1-6, 8-11, 13-16, 18
-21, 23-26, 28-44
N/C No Connection
3
45 Pad Ground
4
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information
1,2
MASW-011071-TR0500 500 piece reel
MASW-011071-001SMB Sample Board
Functional Diagram
3. MACOM recommends connecting all No Connection (N/C)
pins to ground.
4. The paddle on the package bottom must be connected to RF,
DC and thermal ground.
J3
1
1
44
43 42
41
40
2
3
4
5
B3
J1
J2
B2
39
38 37
36
35
34
1
6
7
8
9
10
11
1
33
32
31
30
29
1
28
27
26
25
24
23
12
13 14
15
16
17
18 19
20
21
22
C C C C
Rterm1
Rterm2
SW1 SW2
N/C
N/C
N/C
N/C
N/C
N/CN/C
1. Reference Application Note M513 for reel size information.
2. All sample boards include 3 loose parts.
20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Rev. V1
MASW-011071
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
dB —
0.9
1.0
1.0
1.2
—
—
1.4
—
Input to Output Isolation
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
dB
—
—
32
—
36
37
39
38
—
Input Return Loss
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
dB —
26
26
31
19
—
Return Loss (Termination)
8.0 GHz
8.5 GHz
9.5 GHz
10.5 GHz
dB
—
—
14
—
12
16
28
18
—
P0.1dB
9.5 GHz
(+5 V, -30 V)
dBm — 44.5 —
Input IP3
10 GHz, +20 dBm,
10 MHz spacing
dBm — 60 —
Switching Speed
6
10 GHz, +/- 4 V, PW 500 ns,
50% duty cycle
ns — 130 —
Electrical Specifications
5
: T
A
= +25°C, Z
0
= 50 Ω, P
IN
= 0 dBm (unless otherwise noted)
5. See Driver Connections table.
6. Typical switching speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers. MACOM recommends the
MADR-007097, Complementary Channel TTL PIN Diode Driver.
DC Control Voltages
(DC Currents)
Condition of
RF Output
B2 B3 J1-J2 J1-J3
-5 V
7
(0 mA)
+5 V
(55 mA typ.)
Insertion
Loss
Isolation
+5 V
(55 mA typ.)
-5 V
7
(0 mA)
Isolation
Insertion
Loss
Driver Connections
Bias Control
7
Optimal operation is achieved by simultaneous
application of negative DC voltage to the low loss
switch path and positive DC voltage to the isolating
switch path.
In the low loss path, the diodes are reverse biased.
In the isolating path, the diodes are forward biased.
Minimum Reverse Bias Required:
At X-Band, with a 1:1 match, 5 V of reverse bias is
required. With a 4:1 match, 10 V of reverse bias is
required.
However MACOM recommends 30 V of reverse bias
to achieve optimal operating conditions.
7. R. Caverly and G. Hiller, “Establishing the Minimum Reverse
Bias for a P-I-N Diode in a High Power Switch,” IEEE
Transactions on Microwave Theory and Techniques, Vol.38,
No.12, December 1990.
20 W HMIC Silicon PIN Diode Terminated SPDT Switch
8.0 - 10.5 GHz
Rev. V1
MASW-011071
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Absolute Maximum Ratings
8,9
Applied Reverse Voltage 100 V
Bias Current 100 mA @ +70°C
RF CW Incident Power
(Transmission)
20 W @ +70°C
RF CW Incident Power
(Termination)
1 W @ +70°C
Junction Temperature +175°C
Operating Temperature -40°C to +70°C
Storage Temperature -65°C to +150°C
8. Exceeding any one or combination of these limits may cause
permanent damage to this device.
9. MACOM does not recommend sustained operation near these
survivability limits.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Integrated Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1A
devices.
Functional Schematic
B3
J3
J1
B2
J2
P1-P3P4-P6

MASW-011071

Mfr. #:
Buy MASW-011071
Manufacturer:
MACOM
Description:
RF Switch ICs 8-10.5GHz SPDT IL 1dB Iso 38dB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet