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2N5683

P1-P2
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/466
Devices Qualified Level
2N5683 2N5684
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5683 2N5684 Unit
Collector-Emitter Voltage
V
CEO
60 80 Vdc
Collector-Base Voltage
V
CBO
60 80 Vdc
Emitter-Base Voltage
V
EBO
5.0 Vdc
Base Current I
B
15 Adc
Collector Current
I
C
50 Adc
Total Power Dissipation
(1)
@ T
C
= 25
0
C
@ T
C
= 100
0
C
P
T
300
171
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
0.584
0
C/W
1) Derate linearly 1.715 W/
0
C between T
C
= +25
0
C and T
C
= +200
0
C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N5683
2N5684
V
(BR)
CEO
60
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc 2N5683
V
CE
= 40 Vdc 2N5684
I
CEO
5.0
5.0
µAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc 2N5683
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc 2N5684
I
CEX
5.0
5.0
µAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc 2N5683
V
CB
= 80 Vdc 2N5684
I
CBO
5.0
5.0
µAdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
I
EBO
5.0
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-3*
(TO-204AA)
2N5683, 2N5684 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 5.0 Adc, V
CE
= 2.0 Vdc
I
C
= 25 Adc, V
CE
= 2.0 Vdc
I
C
= 50 Adc, V
CE
= 5.0 Vdc
h
FE
30
15
5.0
60
Collector-Emitter Saturation Voltage
I
C
= 25 Adc, I
B
= 2.5 Adc
I
C
= 50 Adc, I
B
= 10 Adc
V
CE(sat)
1.0
5.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 25 Adc, I
B
= 2.5 Adc
V
BE(sat)
2.0 Vdc
Base-Emitter Voltage
I
C
= 25 Adc, V
CE
= 2.0 Vdc
V
BE(on)
2.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 5.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz
h
fe
2.0 20
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 10 Adc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
fe
15
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 0.1 MHz ≤ f ≤ 1.0 MHz
C
obo
2,000 pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 25 Adc; I
B
= 2.5 Adc
t
on
1.5
µs
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 25 Adc; I
B1
= I
B2
= 2.5 Adc
t
off
3.0
µs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 6.0 Vdc, I
C
= 50 Adc All Types
Test 2
V
CE
= 30 Vdc, I
C
= 10 Adc All Types
Test 3
V
CE
= 50 Vdc, I
C
= 560 mAdc 2N5683
V
CE
= 60 Vdc, I
C
= 640 mAdc 2N5684
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
P1-P2

2N5683

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Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
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