© 2010 IXYS CORPORATION, All Rights Reserved
IXFA180N10T2
IXFP180N10T2
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
5
10
15
20
25
30
35
40
45
50
55
90 100 110 120 130 140 150 160 170 180
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 2 , V
GS
= 10V
V
DS
= 50V
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
13
14
15
16
17
18
19
20
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
r
- Nanoseconds
19
20
21
22
23
24
25
26
t
d
on
- Nanoseconds
t
r
t
d(on)
- - - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 90A, 180A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
10
11
12
13
14
15
16
17
18
19
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
28
30
32
34
36
38
40
42
44
46
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - - -
R
G
= 2, V
GS
= 10V
V
DS
= 50V
I
D
= 90A
I
D
= 180A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
11
12
13
14
15
16
17
90 100 110 120 130 140 150 160 170 180
I
D
- Amperes
t
f
- Nanoseconds
26
30
34
38
42
46
50
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - - -
R
G
= 2, V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
0
5
10
15
20
25
30
35
40
45
50
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 50V
I
D
= 45A
I
D
= 90A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
12
13
14
15
16
17
23456789101112131415
R
G
- Ohms
t
f
- Nanoseconds
36
38
40
42
44
46
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 180A, 90A
