BSO104N03S
OptiMOS
™
2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel
• Logic level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current
I
D
T
A
=25 °C
2)
13 10 A
T
A
=70 °C
2)
10 8
Pulsed drain current
I
D,pulse
T
A
=25 °C
3)
Avalanche energy, single pulse
E
AS
I
D
=13 A, R
GS
=25 Ω
mJ
Reverse diode dv /dt dv /dt
I
D
=13 A, V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=150 °C
kV/µs
Gate source voltage
V
GS
V
Power dissipation
P
tot
T
A
=25 °C
2)
2.5 1.56 W
Operating and storage temperature
T
j
, T
stg
°C
IEC climatic category; DIN IEC 68-1
Value
55/150/56
-55 ... 150
±20
6
73
52
V
DS
30 V
R
DS(on),max
9.7
mΩ
I
D
13 A
Product Summary
PG-DSO-8
Type Package Marking
BSO104N03S PG-DSO-8 104N3S
Rev. 1.7 page 1 2010-05-06
