N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JUNE 94
FEATURES
* 60 Volt V
DS
*R
DS(on)
=1Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T
amb
=25°C I
D
600 mA
Pulsed Drain Current I
DM
8A
Gate-Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
0.7 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1.3 3 V ID=1mA, V
DS
=V
GS
Gate-Body Leakage I
GSS
100 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
100
µA
µA
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
3AV
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
1
1.5
Ω
Ω
V
GS
=10V,I
D
=1.5A
V
GS
=5V,I
D
=500mA
Forward Transconductance(1)(2
)
g
fs
300 mS V
DS
=25V,I
D
=1.5A
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2)
C
oss
60 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
20 pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈25V, I
D
=1.5A
Rise Time (2)(3) t
r
12 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN4206A
D
G
S
E-LINE
TO92 COMPATIBLE
