DMP3050LSS
Document number: DS35647 Rev. 4 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP3050LSS
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage (Note 4)
V
GSS
±25 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-4.8
-3.8
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-6.3
-4.9
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
-3.0 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-30 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
1.7
W
T
A
= 70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θ
JA
73
°C/W
t<10s 37
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current
I
DSS
- - -1 A
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
th
-1.0 - -2.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
- 36 45
mΩ
V
GS
= -10V, I
D
= -6A
- 61 80
V
GS
= -4.5V, I
D
= -5A
Forward Transfer Admittance
|Y
fs
|
- 4.8 - S
V
DS
= -10V, I
D
= -5.3A
Diode Forward Voltage
V
SD
- -0.7 -1.0 V
V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 620 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 83 - pF
Reverse Transfer Capacitance
C
rss
- 62 - pF
Gate resistance
R
- 10.8 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
- 5.1 - nC
V
DS
= -15V, I
D
= -6A
Total Gate Charge (V
GS
= -10V) Q
- 10.5 - nC
Gate-Source Charge
Q
s
- 1.8 - nC
Gate-Drain Charge
Q
d
- 1.9 - nC
Turn-On Delay Time
t
D
on
- 6.8 - ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6, I
D
= -1A
Turn-On Rise Time
t
- 4.9 - ns
Turn-Off Delay Time
t
D
off
- 28.4 - ns
Turn-Off Fall Time
t
f
- 12.4 - ns
Reverse Recovery Time
t
r
- 14 - ns
I
F
= 12A, di/dt = 500A/s
Reverse Recovery Charge
Q
r
- 11 - nC
Notes: 4. AEC-Q101 V
GS
maximum is ±20V
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
