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1N4148WS-E3-08

P1-P3P4-P5
1N4148WS
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 14-Oct-16
1
Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MARKING (example only)
Bar = cathode marking
XY = type code
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature.
Note
(1)
Valid provided that electrodes are kept at ambient temperature
X
Y
22610
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
1N4148WS
1N4148WS-E3-08 or 1N4148WS-E3-18
Single diode A2 Tape and reel
1N4148WS-HE3-08 or 1N4148WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
75
V
Repetitive peak reverse voltage V
RRM
100
Average rectified current half wave
rectification with resistive load
(1)
f 50 Hz I
F(AV)
150
mA
Surge forward current t < 1 s and T
j
= 25 °C I
FSM
350
Power dissipation
(1)
P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
650 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C
1N4148WS
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 14-Oct-16
2
Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 10 mA V
F
1V
I
F
= 100 mA V
F
1.2 V
Leakage current
V
R
= 20 V I
R
25 nA
V
R
= 75 V I
R
5
μAV
R
= 100 V I
R
100
V
R
= 20 V, T
j
= 150 °C I
R
50
Diode capacitance V
F
= V
R
= 0 V C
D
4pF
Voltage rise when switching ON
Tested with 50 mA pulses,
t
p
= 0.1 μs, rise time < 30 ns,
f
p
= (5 to 100) kHz
V
fr
2.5 V
Reverse recovery time
I
F
= 10 mA, i
R
= 1 mA, V
R
= 6 V,
R
L
= 100
t
rr
4ns
17437
0
1
2
V
F
(V)
I
F
(mA)
10
-1
10
-2
1
10
10
2
10
3
T
j
= 100 °C
T
j
= 25 °C
17438
f = 1 kHz
T
j
= 25 °C
I
F
(mA)
R
f
(Ω)
10
10
2
10
3
10
4
10
-2
10
-1
110
2
10
2
5
2
5
2
5
2
5
0
50
100
150
200
250
0 50 100 150 200
20324
T
amb
- Ambient Temperature (°C)
P
tot
- Power Dissipation (mW)
17440
V
R
(V)
0.7
0.8
0.9
1.0
1.1
f = 1 MHz
T
j
= 25 °C
2086410
C
D
(V
R
)
C
D
(0 V)
1N4148WS
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 14-Oct-16
3
Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
17441
T
j
(°C)
I
R
(nA)
10
10
2
10
3
10
4
100 200
2
5
2
5
2
5
2
5
V
R
= 20 V
1
0
17442
t
P
(s)
I
FRM
(A)
100
1
3
5
10
-5
10
-4
10
-3
1010
-1
10
-2
25 2 525 25 25 25
2
4
10
3
5
2
4
1
3
5
2
4
0.1
I
I
FRM
T
n = t
P
/T T = 1/f
P
t
t
P
n = 0
0.1
0.2
0.5
P1-P3P4-P5

1N4148WS-E3-08

Mfr. #:
Buy 1N4148WS-E3-08
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 100 Volt 350mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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