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74ABT245
Absolute Maximum Ratings(Note 1) Recommended Operating
Conditions
Note 1: Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs
DC Electrical Characteristics
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias −55°C to +125°C
Junction Temperature under Bias −55°C to +150°C
V
CC
Pin Potential to Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-off State −0.5V to 5.5V
in the HIGH State −0.5V to V
CC
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
DC Latchup Source Current −500 mA
Over Voltage Latchup (I/O) 10V
Free Air Ambient Temperature −40°C to +85°C
Supply Voltage +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Symbol Parameter Min Typ Max Units
V
CC
Conditions
V
IH
Input HIGH Voltage 2.0 V Recognized HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized LOW Signal
V
CD
Input Clamp Diode Voltage −1.2 V Min
I
IN
= −18 mA (OE, T/R)
V
OH
Output HIGH Voltage 2.5 V Min I
OH
= −3 mA (A
n
, B
n
)
2.0 V Min I
OH
= −32 mA (A
n
, B
n
)
V
OL
Output LOW Voltage 0.55 V Min I
OL
= 64 mA (A
n
, B
n
)
I
IH
Input HIGH Current 1
µAMax
V
IN
= 2.7V (OE, T/R)
1
V
IN
= V
CC
(OE, T/R)
I
BVI
Input HIGH Current Breakdown Test 7 µAMax
V
IN
= 7.0V (OE, T/R)
I
BVIT
Input HIGH Current Breakdown Test (I/O) 100 µAMaxV
IN
= 5.5V (A
n
, B
n
)
I
IL
Input LOW Current −1
µAMax
V
IN
= 0.5V (OE, T/R)
−1
V
IN
= 0.0V (OE, T/R)
V
ID
Input Leakage Test 4.75 V 0.0
I
ID
= 1.9 µA (OE, T/R)
All Other Pins Grounded
I
IH
+ I
OZH
Output Leakage Current 10 µA0 − 5.5V
V
OUT
= 2.7V (A
n
, B
n
); OE = 2.0V
I
IL
+ I
OZL
Output Leakage Current −10 µA0 − 5.5V
V
OUT
= 0.5V (A
n
, B
n
); OE = 2.0V
I
OS
Output Short-Circuit Current −100 −275 mA Max V
OUT
= 0.0V (A
n
, B
n
)
I
CEX
Output HIGH Leakage Current 50 µAMaxV
OUT
= V
CC
(A
n
, B
n
)
I
ZZ
Bus Drainage Test 100 µA0.0V
OUT
= 5.5V (A
n
, B
n
);
All Others GND
I
CCH
Power Supply Current 50 µA Max All Outputs HIGH
I
CCL
Power Supply Current 30 mA Max All Outputs LOW
I
CCZ
Power Supply Current 50 µAMax
OE = V
CC
, T/R = GND or V
CC
;
All Other GND or V
CC
I
CCT
Additional Outputs Enabled 2.5 mA V
I
= V
CC
− 2.1V
I
CC
/Input Outputs 3-STATE 2.5 mA Max
OE, T/R V
I
= V
CC
− 2.1V
Outputs 3-STATE 50 µA Data Input V
I
= V
CC
− 2.1V
All Others at V
CC
or GND.
I
CCD
Dynamic I
CC
No Load 0.1 mA/
Max
Outputs Open
MHz
OE = GND, T/R = GND or V
CC
One Bit Toggling, 50% Duty Cycle
