MII145-12A3
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
50
100
150
200
250
0 200 400 600
0
5
10
15
20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
50
100
150
200
250
6789101112
0
50
100
150
200
13 V
15 V
9V
V
CE
[V]
I
C
[A]
11 V
T
VJ
=25°C
V
GE
=17 V
Fig. 1 Typ. output characteristics
13 V
15 V
9V
11 V
V
GE
=17 V
T
VJ
=125°C
V
CE
[V]
I
C
[A]
Fig. 2 Typ. output characteristics
V
CE
=20V
T
VJ
=25°C
V
GE
[V]
I
C
[A]
Fig. 3 Typ. transfer characteristics
V
CE
=600V
I
C
=50A
Q
G
[nC]
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
0 50 100 150 200
0
10
20
30
40
0
30
60
90
120
E
on
t
d(on)
t
r
E
on
[mJ]
t
[ns]
I
C
[A]
0 50 100 150 200
0
10
20
30
40
0
200
400
600
800
E
off
[mJ]
I
C
[A]
t
[ns]
E
off
t
f
t
d(off)
Fig.5Typ.turnonenergy&switching
timesversuscollectorcurrent
Fig.6 Typ. turn off energy & switching
times versus collector current
0 8 16 24 32 40 48 56
0
10
20
30
40
50
0
60
120
180
240
300
E
on
[mJ]
R
G
[]
E
on
t
d(on)
t
r
0 8 16 24 32 40 48 56
0
5
10
15
20
25
0
300
600
900
1200
1500
E
off
[mJ]
R
G
[]
E
off
t
d(off)
t
[ns]
t
[ns]
Fig.9 Typ.turnonenergy&switching
times versus gate resistor
Fig. 9 Typ. turn off energy & switching
times versus gate resistor
10
-4
10
-3
10
-2
10
-1
10
0
0.00
0.04
0.08
0.12
0.16
0.20
t[s]
Z
thJC
[K/W]
single pulse
Fig. 12 Typical transient
thermal impedance
V
CE
= 600 V
V
GE
=±15V
R
G
=6.8
T
VJ
=125°C
V
CE
=600V
V
GE
=±15V
R
G
=6.8
T
VJ
=125°C
V
CE
=600V
V
GE
=±15V
I
C
=100 A
T
VJ
= 125°C
V
CE
=600V
V
GE
=±15V
I
C
=100 A
T
VJ
=125°C
t
f
IGBT
IXYS reserves the right to change limits, conditions and dimensions.
20131206aData according to IEC 60747and per semiconductor unless otherwise specified
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