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BD682

P1-P3P4-P6P7-P9P10-P12
Electrical characteristics BD6xxx
4/12
2 Electrical characteristics
(T
case
= 25°C; unless otherwise specified)
Table 3. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= half rated V
CEO
0.5 mA
I
CBO
Collector cut-off current
(I
E
= 0)
V
CE
= rated V
CBO
V
CE
= rated V
CBO
T
c
= 100 °C
0.2
2
mA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
2mA
V
CEO(sus)
(1)
Collector-emitter
sustaining voltage (I
B
= 0)
for BD677, BD677A,
BD678, BD678A
I
C
= 50 mA
60
V
for BD679, BD679A,
BD680, BD680A
I
C
= 50 mA
80
for BD681, BD682
I
C
= 50 mA
100
V
CE(sat)
(1)
Collector-emitter saturation
voltage
for BD677, BD678,
BD679, BD680, BD681,
BD682
I
C
= 1.5 A I
B
= 30 mA
2.5
V
for BD677A, BD678A,
BD679A, BD680A
I
C
= 2 A I
B
= 40 mA
2.8
V
BE
(1)
Base-emitter voltage
for BD677, BD678,
BD679, BD680, BD681,
BD682
I
C
= 1.5 A ___ V
CE
= 3 V
2.5 V
for BD677A, BD678A,
BD679A, BD680A
I
C
= 2 A V
CE
= 3 V
BD6xxx Electrical characteristics
5/12
Note: For PNP types voltage e current values are negative.
h
FE
(1)
DC current gain
for BD677, BD678,
BD679, BD680, BD681,
BD682
I
C
= 1.5 A_ _ V
CE
= 3 V
750
for BD677A, BD678A,
BD679A, BD680A
I
C
= 2 A_ _ V
CE
= 3 V
1. Pulsed duration = 300 ms, duty cycle ≥1.5%.
Table 3. Electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Electrical characteristics BD6xxx
6/12
2.1 Typical characteristic (curves)
Figure 2. DC current gain (NPN) Figure 3. DC current gain (PNP)
Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP)
Figure 6. Collector-emitter saturation
voltage (NPN)
Figure 7. Collector-emitter saturation
voltage (PNP)
P1-P3P4-P6P7-P9P10-P12

BD682

Mfr. #:
Buy BD682
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors PNP Power Darlington
Lifecycle:
New from this manufacturer.
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