TP0202K-T1-GE3 Datasheet TP0202K-T1-E3, TP0202K-T1-GE3 | P1-P3

Vishay Siliconix

TP0202K

Document Number: 71609

S-83053-Rev. E, 29-Dec-08

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• High-Side Switching

• Low On-Resistance: 1.2 Ω (typ.)

• Low Threshold: - 2 V (typ.)

• Fast Swtiching Speed: 14 ns (typ.)

• Low Input Capacitance: 31 pF (typ.)

• 2000 V ESD Protection

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Display,

Memories, Transistors, etc.

• Battery Operated Systems

• Power Supply Converter Circuits

• Solid-State Relays

BENEFITS

• Ease in Driving Switches

• Low Offset (Error) Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Easily Driven without Buffer

Notes:

a. Surface Mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)V

GS(th)

(V) I

D

(mA) Q

g

(Typ.)

- 30

1.4 at V

GS

= - 10 V - 1.3 to - 3.0 - 385

1000

3.5 at V

GS

= - 4.5 V - 1.3 to - 3.0 - 240

Marking Code: 2Kwll

2K = Part Number Code for TP0202K

w = Week Code

ll = Lot Traceability

TO-236

(SOT-23)

Top View

2

1

S

D

G

3

Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free)

TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

- 385

mA

T

A

= 85 °C

- 280

Pulsed Drain Current

b

I

DM

- 750

Power Dissipation

a

T

A

= 25 °C

P

D

350

mW

T

A

= 85 °C

185

Maximum Junction-to-Ambient

a

R

thJA

350 °C/W

Operating Junction and Storage Temperature Range

T

J,

T

stg

- 55 to 150 °C

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2

Document Number: 71609

S-83053-Rev. E, 29-Dec-08

Vishay Siliconix

TP0202K

Notes:

a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.

b. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Limits

Unit Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 100 µA

- 30 - 38

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 1.3 - 2 - 3.0

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 5 V

± 50

nA

V

DS

= 0 V, V

GS

= ± 10 V

± 300

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 30 V, V

GS

= 0 V

- 100

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 85 °C

- 10

µA

On-State Drain Current

a

I

D(on)

V

GS

= - 10 V, V

DS

= - 10 V

- 500 mA

Drain-Source On-Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 50 mA

2.1 3.5

Ω

V

GS

= - 10 V, I

D

= - 500 mA

1.25 1.4

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 200 mA

315 mS

Diode Forward Voltage

a

V

SD

I

S

= - 250 mA, V

GS

= 0 V

- 1.2 V

Dynamic

Total Gate Charge

Q

g

V

DS

= - 16 V, V

GS

= - 10 V

I

D

≅ - 200 mA

1000

pCGate-Source Charge

Q

gs

225

Gate-Drain Charge

Q

gd

175

Input Capacitance

C

iss

V

DS

= - 15 V, V

GS

= 0 V

f = 1 MHz

31

pFOutput Capacitance

C

oss

11

Reverse Transfer Capacitance

C

rss

4

Switching

b

Tur n - On T im e

t

d(on)

V

DD

= - 15 V, R

L

= 75 Ω

I

D

≅ - 200 mA, V

GEN

= - 10 V, R

G

= 6 Ω

9

ns

t

r

6

Turn-Off Time

t

d(off)

30

t

f

20

Document Number: 71609

S-83053-Rev. E, 29-Dec-08

www.vishay.com

3

Vishay Siliconix

TP0202K

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Gate-Source Voltage

Capacitance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

012345

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

V

GS

= 10 V

3.5 V

3 V

4.5 V

6 V

8 V

7 V

5.5 V

5 V

4 V

0

4

8

12

16

20

048 12 16 20

V

GS

- Gate -to-Source Voltage (V)

V

GS

= 4.5 V

V

GS

= 10 V

R

DS(on)

-

On-Resistance (Ω)

0

10

20

30

40

50

048 12 16 20

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

C

iss

V

GS

= 0 V

f = 1 MHz

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

200

400

600

800

1000

1200

0123456

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (mA)

T

J

= - 55 °C

125 °C

25 °C

0

2

4

6

8

10

12

14

0 200 400 600 800 1000

I

D

- Drain Current (mA)

V

GS

= 4.5 V

V

GS

= 10 V

R

DS(on)

-

On-Resistance (Ω)

0

2

4

6

8

10

12

14

16

0 200 400 600 800 1000 1200 1400 160

0

I

D

= 200 mA

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (pC)

V

GS

V

DS

= 10 V

V

DS

= 16 V

TP0202K-T1-GE3

TP0202K-T1-GE3

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