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SPA06N60C3XKSA1

P1-P3P4-P6P7-P9P10-P11
SPA06N60C3
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
1)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=3.1 A, V
DD
=50 V
200 mJ
Avalanche energy, repetitive t
AR
1),2)
E
AR
I
D
=6.2 A, V
DD
=50 V
Avalanche current, repetitive t
AR
1)
I
AR
A
Drain source voltage slope dv /dt
I
D
=6.2 A, V
DS
=480 V,
T
j
=125 °C
V/ns
Gate source voltage
V
GS
static V
V
GS
AC (f >1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
j
, T
stg
°C
0.5
6.2
50
Value
6.2
3.9
18.6
±20
±30
32
-55 ... 150
V
DS
@ T
j,max
650 V
R
DS(on),max
0.75
Ω
I
D
1)
6.2 A
Product Summary
P-TO220-3-31
Type Package Ordering Code Marking
SPA06N60C3 PG-TO220-3-31 Q67040-S4631 06N60C3
Rev. 1.3 page 1 2010-12-21
SPA06N60C3
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 3.92 K/W
R
thJA
leaded - - 80
Soldering temperature
T
sold
1.6 mm (0.063 in.)
from case for 10 s
- - 260 °C
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 µA
600 - - V
Avalanche breakdown voltage
V
(BR)DS
V
GS
=0 V, I
D
=6.2 A
- 700 -
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=0.26 mA
2.1 3 3.9
Zero gate voltage drain current
I
DSS
V
DS
=600 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=600 V, V
GS
=0 V,
T
j
=150 °C
- - 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=3.9 A,
T
j
=25 °C
- 0.68 0.75
Ω
V
GS
=10 V, I
D
=3.9 A,
T
j
=150 °C
- 1.82 -
Gate resistance
R
G
f =1 MHz, open drain - 1 -
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=3.9 A
- 5.6 - S
Values
Thermal resistance, junction -
ambient
Rev. 1.3 page 2 2010-12-21
SPA06N60C3
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 620 - pF
Output capacitance
C
oss
- 200 -
Reverse transfer capacitance
C
rss
-17-
Effective output capacitance, energy
related
3)
C
o(er)
-28-
Effective output capacitance, time
related
4)
C
o(tr)
-47-
Turn-on delay time
t
d(on)
-7-ns
Rise time
t
r
-12-
Turn-off delay time
t
d(off)
-52-
Fall time
t
f
-10-
Gate Charge Characteristics
Gate to source charge
Q
gs
- 3.3 - nC
Gate to drain charge
Q
gd
-12-
Gate charge total
Q
g
-2431
Gate plateau voltage
V
plateau
- 5.5 - V
4)
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=480 V,
V
GS
=10 V, I
D
=6.2 A,
R
G
=12 Ω
V
DD
=480 V, I
D
=6.2 A,
V
GS
=0 to 10 V
V
GS
=0 V, V
DS
=0 V
to 480 V
1)
Pulse width limited by maximum temperature T
j,max
only
2)
Repetitive avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3)
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Rev. 1.3 page 3 2010-12-21
P1-P3P4-P6P7-P9P10-P11

SPA06N60C3XKSA1

Mfr. #:
Buy SPA06N60C3XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
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