BAQ133, BAQ134, BAQ135
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 31-Jul-12
1
Document Number: 85536
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, Low Leakage Current
MECHANICAL DATA
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon planar diodes
• Very low reverse current
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE
MARKING
INTERNAL
CONSTRUCTION
REMARKS
BAQ133 V
RRM
= 40 V BAQ133-GS18 or BAQ133-GS08 - Single diode Tape and reel
BAQ134 V
RRM
= 70 V BAQ134-GS18 or BAQ134-GS08 - Single diode Tape and reel
BAQ135 V
RRM
= 140 V BAQ135-GS18 or BAQ135-GS08 - Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitve peak reverse voltage
BAQ133 V
RRM
40 V
BAQ134 V
RRM
70 V
BAQ135 V
RRM
140 V
Reverse voltage
BAQ133 V
R
30 V
BAQ134 V
R
60 V
BAQ135 V
R
125 V
Peak forward surge current t
p
= 1 μs I
FSM
2A
Forward continuous current I
F
200 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 175 °C
