Document Number: 73333
S-83051-Rev. B, 29-Dec-08
www.vishay.com
5
Vishay Siliconix
Si7403BDN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
1
10
20
0.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.05
0.10
0.15
0.20
0.25
0.30
012345
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
T
A
= 25 °C
T
A
= 125 °C
I
D
= 5.1 A
0
20
30
5
15
Power (W)
Time (s)
25
1 10000.10.010.001 10 100
Safe Operating Area, Junction-to-Ambient
100
1
0.1 10 100
0.01
10
- Drain Current (A)I
D
0.1
1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
Limited by R
DS(on)*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS( on)
is specified
1 s
10 s
100 µs