256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
13 ©2006 Micron Technology, Inc. All rights reserved.
Table 12: IDD Specifications and Conditions – 512MB
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION SYMBOL -13E -133 -10E UNITS NOTES
Operating current: Active mode; Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
IDD1
a
1,096 1,016 1,016 mA 3, 17,19, 32
Standby current: Power-down mode; All device banks idle;
CKE = LOW
I
DD2
b
32 32 32 mA 32
STANDBY CURRENT: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD
met; No accesses in progress
I
DD3
a
336 336 336 mA 3, 12, 19, 32
OPERATING CURRENT: Burst mode; Continuous burst; READ
or WRITE; All device banks active
I
DD4
a
1,096 1,096 1,096 mA 3, 18, 19, 32
Auto refresh current
CKE = HIGH; S# = HIGH
t
RFC =
t
RFC (MIN)
I
DD5
b
4,560 4,320 4,320 mA 3, 12, 18, 19,
32,30
t
RFC = 7.8125µs
IDD6
b
56 56 56 mA
Self refresh current: CKE < 0.2V
Standard
IDD7
b
40 40 40 mA 4
Low power (L)
IDD7
b
24 24 24 mA
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
Table 13: Capacitance
Note 2; notes appear on page 16
PARAMETER SYMBOL MIN MAX UNITS
Input capacitance: Address and command
C
I1 40 60.8 pF
Input capacitance: CK
C
I2 20 28 pF
Input capacitance: CKE, S#
C
I3 20 30.4 pF
Input capacitance: DQMB
C
I4 57.6pF
Input/output capacitance: DQ
C
IO 812pF