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MZP4735ARLG

P1-P3P4-P6
MZP4729A Series
http://onsemi.com
4
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
= q
LA
P
D
+ T
A
q
LA
is the lead‐to‐ambient thermal resistance (°C/W) and
P
D
is the power dissipation. The value for q
LA
will vary and
depends on the device mounting method. q
LA
is generally
30-40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady‐state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+ DT
JL
DT
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
DT
JL
= q
JL
P
D
For worst‐case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(DT
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
DV = q
VZ
DT
J
q
VZ
, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power‐pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
Figure 5. Units to 12 Volts Figure 6. Units 10 to 400 Volts
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
V
Z
, ZENER VOLTAGE @ I
ZT
(VOLTS)
34 5 6789101112
10
8
6
4
2
0
-2
-4
RANGE
, TEMPERATURE COEFFICIENT (mV/ C) @ I
ZTVZ
°
θ
1000
500
200
100
50
20
10
10 20 50 100 200 400 1000
V
Z
, ZENER VOLTAGE @ I
ZT
(VOLTS)
, TEMPERATURE COEFFICIENT (mV/ C) @ I
ZTVZ
°θ
MZP4729A Series
http://onsemi.com
5
Figure 7. V
Z
= 3.3 to 10 Volts Figure 8. V
Z
= 12 to 82 Volts
Figure 9. V
Z
= 100 to 400 Volts
Figure 10. Typical Thermal Resistance
ZENER VOLTAGE versus ZENER CURRENT
(Figures 7, 8 and 9)
0123456 7 8910
100
50
30
20
10
1
0.5
0.3
0.2
0.1
V
Z
, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
2
5
3
0102030405060708090100
V
Z
, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
100
50
30
20
10
1
0.5
0.3
0.2
0.1
2
5
3
100 200 300 400250 350150
10
1
0.5
0.2
0.1
V
Z
, ZENER VOLTAGE (VOLTS)
2
5
I , ZENER CURRENT (mA)
Z
0
10
20
30
40
50
60
70
80
L, LEAD LENGTH TO HEAT SINK (INCH)
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
T
L
JL
, JUNCTION‐TO‐LEAD THERMAL RESISTANCE
θ
LL
( C/W)°
MZP4729A Series
http://onsemi.com
6
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59-10
ISSUE U
B
D
K
K
F
F
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 4.10 5.200.161 0.205
B 2.00 2.700.079 0.106
D 0.71 0.860.028 0.034
F --- 1.27--- 0.050
K 25.40 ---1.000 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MZP4729A/D
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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P1-P3P4-P6

MZP4735ARLG

Mfr. #:
Buy MZP4735ARLG
Manufacturer:
ON Semiconductor
Description:
Zener Diodes 6.2V 3W
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New from this manufacturer.
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