B2M, B4M, B6M
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Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 88898
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Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognized, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• Middle surge current capability
• Recommended for non-automotive applications
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: MBM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
PRIMARY CHARACTERISTICS
Package MBM
I
F(AV)
0.5 A
V
RRM
200 V, 400 V, 600 V
I
FSM
30 A
I
R
5 μA
V
F
at I
F
= 0.5 A 1.0 V
T
J
max. 150 °C
Diode variations Quad
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL B2M B4M B6M UNIT
Device marking code B2 B4 B6
Maximum repetitive peak reverse voltage V
RRM
200 400 600 V
Maximum RMS voltage V
RMS
140 280 420 V
Maximum DC blocking voltage V
DC
200 400 600 V
Maximum average forward output rectified current (fig. 1)
on glass-epoxy PCB
I
F(AV)
0.5
(1)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
30 A
Rating for fusing (t < 8.3 ms) I
2
t5.0A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL B2M B4M B6M UNIT
Maximum instantaneous forward
voltage drop per diode
I
F
= 0.5 A V
F
1.0 V
Maximum DC reverse current at rated
DC blocking voltage per diode
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 100
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
13 pF
