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SBC847BPDXV6T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1 Publication Order Number:
BC847BPDXV6T1/D
BC847BPDXV6,
SBC847BPDXV6
NPN/PNP Dual General
Purpose Transistor
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS − NPN
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
45 V
Collector−Base Voltage V
CBO
50 V
Emitter−Base Voltage V
EBO
6.0 V
Collector Current −
Continuous
I
C
100 mAdc
MAXIMUM RATINGS − PNP
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−45 V
Collector−Base Voltage V
CBO
−50 V
Emitter−Base Voltage V
EBO
−5.0 V
Collector Current −
Continuous
I
C
−100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
357
2.9
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient (Note 1)
R
q
JA
350
°C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
500
4.0
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient (Note 1)
R
q
JA
250
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
1. FR−4 @ Minimum Pad
SOT−563
CASE 463A
1
2
3
6
5
4
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
†
BC847BPDXV6T1G SOT−563
(Pb−Free)
4 mm pitch
4000/Tape & Reel
SBC847BPDXV6T1G SOT−563
(Pb−Free)
2 mm pitch
4000/Tape & Reel
BC847BPDX6T1
4F = Specific Device Code
M = Month Code
G = Pb−Free Package
4F MG
G
1
BC847BPDXV6T5G SOT−563
(Pb−Free)
2 mm pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
BC847BPDXV6, SBC847BPDXV6
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (NPN) (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA)
V
(BR)CEO
45 − −
V
Collector−Emitter Breakdown Voltage
(I
C
= 10 μA, V
EB
= 0)
V
(BR)CES
50 − −
V
Collector−Base Breakdown Voltage
(I
C
= 10 mA)
V
(BR)CBO
50 − −
V
Emitter−Base Breakdown Voltage
(I
E
= 1.0 mA)
V
(BR)EBO
6.0 − −
V
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
I
CBO
−
−
−
−
15
5.0
nA
μA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 μA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
h
FE
−
200
150
290
−
475
−
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector−Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage (I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz) C
obo
− − 4.5 pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF
− − 10
dB
BC847BPDXV6, SBC847BPDXV6
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (PNP) (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA)
V
(BR)CEO
−45 − −
V
Collector−Emitter Breakdown Voltage
(I
C
= −10 μA, V
EB
= 0)
V
(BR)CES
−50 − −
V
Collector−Base Breakdown Voltage
(I
C
= −10 mA)
V
(BR)CBO
−50 − −
V
Emitter−Base Breakdown Voltage
(I
E
= −1.0 mA)
V
(BR)EBO
−5.0 − −
V
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current (V
CB
= −30 V, T
A
= 150°C)
I
CBO
−
−
−
−
−15
−4.0
nA
μA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 μA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V)
h
FE
−
200
150
290
−
475
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−0.3
−0.65
V
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
V
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
C
ob
− − 4.5 pF
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
P1-P3P4-P6

SBC847BPDXV6T1G

Mfr. #:
Buy SBC847BPDXV6T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V
Lifecycle:
New from this manufacturer.
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