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IXGH36N60B3D1
P1-P3
P4-P6
P7-P7
© 2009 IXYS CORPORATION, All Rights Reserved
DIODE CURVES
IXGH36N60B3D1
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
μ
s
A
V
nC
A/
μ
s
A/
μ
s
t
rr
ns
t
fr
Z
thJC
A/
μ
s
μ
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 30A
Fig. 23.
Peak reverse current I
RM
versus -di
F
/dt
Fig. 22.
Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 21.
Forward current I
F
versus V
F
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 20.
Dynamic parameters Q
r
, I
RM
Fig. 25.
Recovery time t
rr
versus
-di
F
/dt
Fig. 26.
Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 27.
Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
Fig. 24.
Dynamic parameters Q
r
, I
RM
versus T
VJ
IXYS REF: G_36N60B3(55) 5-05-08-C
P1-P3
P4-P6
P7-P7
IXGH36N60B3D1
Mfr. #:
Buy IXGH36N60B3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 36 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
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IXGH36N60B3D1