Typical Connection
HIGH AND LOW SIDE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
•
Gate drive supply range from 10 to 20V (IR2106(4))
•
Undervoltage lockout for both channels
•
3.3V, 5V and 15V input logic compatible
•
Matched propagation delay for both channels
•
Logic and power ground +/- 5V offset.
•
Lower di/dt gate driver for better noise immunity
•
Outputs in phase with inputs (IR2106)
• Also available LEAD-FREE
Packages
14-Lead PDIP
14-Lead SOIC
IR2106(4)(S) & (PbF)
8-Lead PDIP
8-Lead SOIC
www.irf.com 1
Data Sheet No. PD60162 Rev. W
(Refer to Lead Assignments for cor-
rect pin configuration). This/These
diagram(s) show electrical connec-
tions only. Please refer to our Appli-
cation Notes and DesignTips for
proper circuit board layout.
Part
Input
logic
Cross-
conduction
prevention
logic
Dead-Time Ground Pins Ton/Toff
2106/2301
COM
21064
HIN/LIN no none
VSS/COM
220/200
2108 Internal 540ns COM
21084
HIN/LIN yes
Programmable 0.54~5 µs
VSS/COM
220/200
2109/2302 Internal 540ns COM
21094
IN/SD yes
Programmable 0.54~5 µs
VSS/COM
750/200
2106/2301//2108//2109/2302/2304
Feature Comparison
2304
HIN/LIN
yes
Internal 100ns
COM
160/140
Description
The IR2106(4)(S) are high voltage,
high speed power MOSFET and
IGBT drivers with independent high
and low side referenced output chan-
nels. Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 600 volts.
IR2106
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
up to 600V
TO
LOAD
V
CC
LIN
HIN
IR21064
up to 600V
TO
LOAD
V
CC
V
B
V
S
HO
LO
COM
HIN
V
SS
LIN
V
CC
V
SS
LIN
HIN