IRF1010NPBF

IRF1010NPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET
®
power MOSFETs
IRF1010NPbF
8 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
LOT CODE 1789
EXAMPLE: THIS IS AN IRF 1010
Note: "P" in as s embly line position
indi cates "L ead - F r ee"
IN THE ASSEMBLY LINE "C"
AS S EMBLED ON WW 19, 2000
INTERNAT IONAL
PART NUMBER
RECT IF IER
LOT CODE
ASSEMBLY
LOGO
YEAR 0 = 2000
DAT E CODE
WEE K 19
LINE C
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF1010NPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 72A 11mOhm 80nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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