MC74HCT08A
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) −0.5 to +7.0 V
V
in
DC Input Voltage (Referenced to GND) −0.5 to V
CC
+0.5 V
V
out
DC Output Voltage (Referenced to GND) −0.5 to V
CC
+0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±50 mA
P
D
Power Dissipation in Still Air, SOIC Package
†
TSSOP Package
†
500
450
mW
T
stg
Storage Temperature −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC or TSSOP Package
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating − SOIC Package: − 7 mW/°C from 65°C to 125°C
TSSOP Package: − 6.1 mW/°C from 65°C to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage
(Referenced to GND)
0 V
CC
V
T
A
Operating Temperature, All Package Types −55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 3) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
