SJPX-H6VL Datasheet SJPX-H6, SJPX-H6VL, SJPX-H6VR | P1-P3

http://www.sanken-ele.co.jp

SJPX-H6 May. 2016

Fast Recovery Diode

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any

infringements of patents or other rights of third parties that may result from its use

Copy Right: SANKEN ELECTRIC CO.,LTD.

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SANKEN ELECTRIC

General Description

SJPX-H6 has the characteristics of low VF and superior

trr at high temperature. High efficiency is achieved by

reducing the loss of circuit at high temperature.

Package

SJP

(1) Cathode

(2) Anode

Not to Scale

Applications

･DC-DC converters

･AC adapter

･High frequency rectification circuit

Key Specifications

Item

Rating

Unit

Conditions

V

RM

600

V

F

1.5

V

I

F

=2.0A

I

F(AV)

2.0

A

t

rr

20

ns

100mA/200mA

Features

・ Super-high speed FRD

・ Low leakage current at high temperature

Typical Characteristics

SJPX-H6 IF-VF 代表特性

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5

VF [V]

IF [A]

SJPX-H6 VR-IR代表特性

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

0 100 200 300 400 500 600

VR[V]

IR[A]

25°C

100°C

125°C

150°C

125°C

100°C

25°C

(2)

(1)

(2)

(1)

Characteristics

http://www.sanken-ele.co.jp

SJPX-H6 May. 2016

Fast Recovery Diode

Copy Right: SANKEN ELECTRIC CO.,LTD.

Page2

SANKEN ELECTRIC

Absolute maximum ratings

No.

Item

Symbol

Unit

Rating

Conditions

1

Transient Peak Reverse Voltage

V

RSM

V

600

2

Peak Reverse Voltage

V

RM

V

600

3

Average Forward Current

I

F(AV)

A

2.0

4

Peak Surge Forward Current

I

FSM

A

20

Half sine-wave, one shot

5

I

2

t Limiting Value

I

2

t

A

2

s

2.0

1ms ≤ t ≤ 10ms

6

Junction Temperature

T

j

°C

-40 to 150

7

Storage Temperature

T

stg

°C

-40 to 150

Electrical characteristics (Ta=25°C, unless otherwise specified)

No.

Item

Symbol

Unit

Value

Conditions

1

Forward Voltage Drop

V

F

V

1.5 max.

I

F

=2.0A

2

Reverse Leakage Current

I

R

uA

10 max.

V

R

=V

RM

3

Reverse Leakage Current Under

High Temperature

H･I

R

mA

3.0 max.

V

R

=V

RM

, T

j

=150°C

4

Reverse Recovery Time

t

rr

1

ns

30 max.

I

F

=I

RP

=100mA

90% Recovery point, T

j

=25°C

t

rr

2

ns

20 max.

I

F

=100mA，I

RP

=200mA

75% Recovery point, T

j

=25°C

5

Thermal Resistance

R

th(j-c)

°C /W

20 max.

Between Junction and Lead

http://www.sanken-ele.co.jp

SJPX-H6 May. 2016

Fast Recovery Diode

Copy Right: SANKEN ELECTRIC CO.,LTD.

Page3

SANKEN ELECTRIC

Characteristics

Forward Power Dissipation

Forward Power Dissipation PF (W)

Average Forward Current I

F(AV)

(A)

Reverse Power Dissipation

Reverse Power Dissipation PR (W)

Reverse Voltage V

R

(V)

Average Forward Current I

F(AV)

(A)

Lead temperature T

L

(°C)

Current Derating V

R

=0V

0

1

2

3

4

0.0 0.5 1.0 1.5 2.0

Tj=150℃

t

T

t/T=1/6

t/T=1/3,sinewave

t/T=1/2

DC

0

0.5

1

1.5

0 100 200 300 400 500 600

Tj=150℃

t

T

t/T=1/6

t/T=1/2

DC

t/T=1/3，sinewave

0.0

0.5

1.0

1.5

2.0

0 50 100 150

Tj=150℃

t

T

t/T=1/6

t/T=1/3,sinewave

t/T=1/2

DC

SJPX-H6VL

SJPX-H6VL

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