TLP631,TLP632
2014-09-22
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current I
F
60 mA
Forward current derating (Ta ≥ 39°C) ∆I
F
/ °C −0.7 mA / °C
Peak forward current (100μs pulse, 100pps) I
FP
1 A
Reverse voltage V
R
5 V
Junction temperature T
j
125 °C
Detector
Collector−emitter voltage V
CEO
55 V
Collector−base voltage (TLP631) V
CBO
80 V
Emitter−collector voltage V
ECO
7 V
Emitter−base voltage (TLP631) V
EBO
7 V
Collector current I
C
50 mA
Power dissipation P
C
150 mW
Power dissipation derating (Ta ≥ 25°C) ∆P
C
/ °C −1.5 mW / °C
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Operating temperature range T
opr
−55 to 100 °C
Lead soldering temperature (10s) T
sol
260 °C
Total package power dissipation P
T
250 mW
Total package power dissipation derating (Ta≥ 25°C) ∆P
T
/ °C −2.5 mW / °C
Isolation voltage (AC, 1 minute, R.H. ≤ 60%) BV
S
5000
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage V
CC
― 5 24 V
Forward current I
F
― 16 25 mA
Collector current I
C
― 1 10 mA
Operating temperature T
opr
−25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
