VCUT05B1-DD1
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Jun-16
2
Document Number: 81149
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CUT THE SPIKES WITH VCUT05B1-DD1
The VCUT05B1-DD1 is a Bidirectional and Symmetrical (BiSy) ESD-protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT05B1-DD1 offers a high
isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package
size of the tiny LLP1006-2M package the line inductance is very low, so that fast transients like and ESD-strike can be clamped
with minimal over- or undershoots.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
ELECTRICAL CHARACTERISTICS VCUT05B1-DD1
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
- - 1 lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5.5V
Reverse voltage at I = 0.1 μA V
R
5.5 - - V
Reverse current at V = 5.5 V I
R
--0.1μA
Reverse breakdown voltage at I = 1 mA V
BR
67.58.5V
Reverse clamping voltage
at I
PP
= 1 A V
C
- 8.3 10.5 V
at I
PP
= I
PPM
= 3 A V
C
- 10.3 12.5 V
Capacitance
at V = 0 V; f = 1 MHz C
D
-1013pF
at V = 2.5 V; f = 1 MHz C
D
-8-pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
V
R
(V)
C
D
(pF)
21792
0
2
4
6
8
10
12
0123456
f = 1 MHz
I
R
(µA)
V
R
(V)
21793
10
-2
10
-1
110
1
10
2
10
3
10
4
10
5
0
1
2
3
4
5
6
7
8
9
BiAs-mode