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PD85015TR-E

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics PD85015-E
4/14 Doc ID 14466 Rev 4
2 Electrical characteristics
T
CASE
= +25
o
C
2.1 Static
2.2 Dynamic
2.3 ESD protection characteristics
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0V V
DS
= 25 V 1 µA
I
GSS
V
GS
= 5 V V
DS
= 0 V 1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= 150 mA 3.0 4.3 V
V
DS(ON)
V
GS
= 10 V I
D
= 1 A 0.34 V
C
ISS
V
GS
= 0V V
DS
= 12.5 V f = 1 MHz 45 pF
C
OSS
V
GS
= 0V V
DS
= 12.5 V f = 1 MHz 36 pF
C
RSS
V
GS
= 0V V
DS
= 12.5 V f = 1 MHz 1.2 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
P3dB V
DD
= 13.6 V, I
DQ
= 150 mA f = 870 MHz 15 20
-
W
G
P
V
DD
= 13.6 V, I
DQ
= 150 mA, P
OUT
= 15 W, f = 870 MHz 16 dB
h
D
V
DD
= 13.6 V, I
DQ
= 150 mA, P
OUT
= P3dB, f = 870 MHz 60 70 %
Load
mismatch
V
DD
= 1 7 V, I
DQ
= 300 mA, P
OUT
= 25 W, f = 870 MHz
All phase angles
20:1 VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
PD85015-E Impedance
Doc ID 14466 Rev 4 5/14
3 Impedance
Figure 2. Current conventions
Table 7. Impedance data
Frequency Z
IN
(Ω)Z
DL
(Ω)
500 MHz 0.536 - j 2.968 4.930 + j 1.083
600 MHz 0.557 - j 1.224 4.329 + j 0.811
700 MHz 0.595 + j 0.236 3.784 + j 0.429
800 MHz 0.651 + j 1.512 3.305 - j 0.031
900 MHz 0.708 + j 2.671 2.889 - j 0.542
1000 MHz 0.761 + j 3.759 2.534 - j 1.085
Typical performances PD85015-E
6/14 Doc ID 14466 Rev 4
4 Typical performances
Figure 3. Drain current vs gate voltage Figure 4. DC output characteristics
Figure 5. Capacitances vs drain
voltage
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25 30
Drain voltage (V)
Capacitances (pF)
Coss Crss Ciss
P1-P3P4-P6P7-P9P10-P12P13-P14

PD85015TR-E

Mfr. #:
Buy PD85015TR-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F. N-Ch Trans
Lifecycle:
New from this manufacturer.
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