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S1FLB-M-18

P1-P3P4-P6P7-P7
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
www.vishay.com
Vishay Semiconductors
Rev.1.0, 26-Aug-13
1
Document Number: 82453
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Rectifier, High Voltage Surface Mount
MECHANICAL DATA
Case: DO-219AB (SMF)
Polarity: band denotes cathode end
Weight: approx. 15 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 50K/box
08/3K per 7" reel (8 mm tape), 30K/box
Int. construction: Single
FEATURES
• For surface mounted applications
• Low profile package
• Ideal for automated placement
• Glass passivated
• High temperature soldering: 260 °C/10 s at
terminals
• Wave and reflow solderable
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Averaged over any 20 ms periode
17249
PARTS TABLE
PART ORDERING CODE MARKING REMARKS
S1FLB-M S1FLB-M-18 or S1FLB-M-08 HB Tape and reel
S1FLD-M S1FLD-M-18 or S1FLD-M-08 HD Tape and reel
S1FLG-M S1FLG-M-18 or S1FLG-M-08 HG Tape and reel
S1FLJ-M S1FLJ-M-18 or S1FLJ-M-08 HJ Tape and reel
S1FLK-M S1FLK-M-18 or S1FLK-M-08 HK Tape and reel
S1FLM-M S1FLM-M-18 or S1FLM-M-08 HM Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage
S1FLB-M V
RRM
100 V
S1FLD-M V
RRM
200 V
S1FLG-M V
RRM
400 V
S1FLJ-M V
RRM
600 V
S1FLK-M V
RRM
800 V
S1FLM-M V
RRM
1000 V
Maximum RMS voltage
S1FLB-M V
RMS
70 V
S1FLD-M V
RMS
140 V
S1FLG-M V
RMS
280 V
S1FLJ-M V
RMS
420 V
S1FLK-M V
RMS
560 V
S1FLM-M V
RMS
700 V
Maximum DC blocking voltage
S1FLB-M V
DC
100 V
S1FLD-M V
DC
200 V
S1FLG-M V
DC
400 V
S1FLJ-M V
DC
600 V
S1FLK-M V
DC
800 V
S1FLM-M V
DC
1000 V
Maximum average forward rectified current
T
tp
= 75 °C
(1)
I
F(AV)
1.5 A
T
A
= 25 °C
(1)
at R
thJA
< 110 K/W I
F(AV)
1A
T
A
= 65 °C
(1)
I
F(AV)
0.7 A
Peak forward surge current 8.3 ms half sine-wave T
L
= 25 °C I
FSM
22 A
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
www.vishay.com
Vishay Semiconductors
Rev.1.0, 26-Aug-13
2
Document Number: 82453
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 μm thick)
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to
ambient air
(1)
R
thJA
180 K/W
Operating junction and storage
temperature range
T
j
, T
stg
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Instaneous forward voltage 1 A
(1)
S1FLB-M V
F
1.1 V
S1FLD-M V
F
1.1 V
S1FLG-M V
F
1.1 V
S1FLJ-M V
F
1.1 V
S1FLK-M V
F
1.1 V
S1FLM-M V
F
1.1 V
Maximum DC reverse current at rated
DC blocking voltage
T
A
= 25 °C
S1FLB-M I
R
10 μA
S1FLD-M I
R
10 μA
S1FLG-M I
R
10 μA
S1FLJ-M I
R
10 μA
S1FLK-M I
R
10 μA
S1FLM-M I
R
10 μA
T
A
= 125 °C
S1FLB-M I
R
50 μA
S1FLD-M I
R
50 μA
S1FLG-M I
R
50 μA
S1FLJ-M I
R
50 μA
S1FLK-M I
R
50 μA
S1FLM-M I
R
50 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
S1FLB-M t
rr
1800 ns
S1FLD-M t
rr
1800 ns
S1FLG-M t
rr
1800 ns
S1FLJ-M t
rr
1800 ns
S1FLK-M t
rr
1800 ns
S1FLM-M t
rr
1800 ns
Typical capacitance 4 V, 1 MHz
S1FLB-M C
j
4pF
S1FLD-M C
j
4pF
S1FLG-M C
j
4pF
S1FLJ-M C
j
4pF
S1FLK-M C
j
4pF
S1FLM-M C
j
4pF
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
www.vishay.com
Vishay Semiconductors
Rev.1.0, 26-Aug-13
3
Document Number: 82453
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Typical Instantaneous Forward Characteristics
Fig. 3 - Typical Instantaneous Reverse Characteristics
Fig. 4 - Capacitance vs. Reverse Voltage
0
0.6
0.8
1.2
1.0
0 20 40 60 80 100 120 140 160
Average Forward Current (A)
Ambient Temperature (°C)
0.4
0.2
Resistive or inductive load
3.0 mm x 3.0 mm 40 µm
thick copper pad areas
17375
100
1000
600 700 800 900 1000 1100
Instantaneous Forward Current (mA)
Instantaneous Forward Voltage (mV)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
17376
InstantaneousReverse Current (µA)
InstantaneousReverse Voltage (V)
0 100 200 300 400 500 600 700 800 900
0.01
0.1
10
1
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
17377
V
R
(V)
C (pF)
0 5 10 15 20 25 30 35 40
10
9
8
7
6
5
4
3
2
1
0
17378
P1-P3P4-P6P7-P7

S1FLB-M-18

Mfr. #:
Buy S1FLB-M-18
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3M
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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