VS-20ETF10FP-M3

VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
1
Document Number: 93222
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Glass passivated pellet chip junction
150 °C max. operation junction temperature
Designed and qualified according to
JEDEC
®
-JESD 47
Fully isolated package (V
INS
= 2500 V
RMS
)
UL E78996 approved
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF...FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-220FP
I
F(AV)
20 A
V
R
1000 V, 1200 V
V
F
at I
F
1.31 V
I
FSM
320 A
t
rr
95 ns
T
J
max. 150 °C
Diode variation Single die
Snap factor 0.6
2
1
Cathode
3
Anode
TO-220 FULL-PAK
1
2
3
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
1000 to 1200 V
I
F(AV)
Sinusoidal waveform 20
A
I
FSM
320
t
rr
1 A, 100 A/μs 95 ns
V
F
20 A, T
J
= 25 °C 1.31 V
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-20ETF10FPPbF, VS-20ETF10FP-M3 1000 1100
6
VS-20ETF12FPPbF, VS-20ETF12FP-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 50 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 270
10 ms sine pulse, no voltage reapplied 320
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 365
A
2
s
10 ms sine pulse, no voltage reapplied 515
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 5150 A
2
s
VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
2
Document Number: 93222
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
20 A, T
J
= 25 °C 1.31 V
Forward slope resistance r
t
T
J
= 150 °C
11.88 m
Threshold voltage V
F(TO)
0.93 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 6
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 20 Apk
25 A/μs
25 °C
400 ns
Reverse recovery current I
rr
6.1 A
Reverse recovery charge Q
rr
1.7 μC
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220 FULL-PAK
20ETF10FP
20ETF12FP
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
t
a
t
b
VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
3
Document Number: 93222
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
0 4 8 12 16 20
0
40
80
120
160
30°
20ETF.. Series
60°
90°
120°
180°
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
0 5 10 15 20 25 30 35
0
50
100
150
30°
20ETF.. Series
60°
180°
DC
120°
90°
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
25
25
30
20
10 155
5
15
Conduction angle
T
J
= 150 °C
RMS limit
180°
120°
90°
60°
30°
Ø
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
25
25
15
10 205
15
5
20
30
RMS limit
Ø
Conduction period
T
J
= 150 °C
180°
120°
90°
60°
30°
300
50
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20ETF.. Series
400
150
50
0.001 0.01 1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
550
Maximum non-repetitive surge current
versus pulse train duration.
20ETF.. Series
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
0.1
450
500

VS-20ETF10FP-M3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers New Input Diodes - FULLPAK-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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