GP1S097HCZ0F

GP1S097HCZ0F
1
Sheet No.: D3-A01201FEN
Date Jun. 30. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of con rmation by device speci cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device speci cation sheets before using any SHARP device.
GP1S097HCZ0F
Gap : 2mm, Slit : 0.3mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
Description
GP1S097HCZ0F
is a compact-package, phototransis-
tor output, transmissive photointerrupter, with opposing
emitter and detector in a molding that provides non-con-
tact sensing. The compact package series is a result of
unique technology combing transfer and injection mold-
ing.
This device has hole that passes through the base of
the device, for assembly or xing, and it has a wide gap.
Features
1. Transmissive with phototransistor output
2. Highlights :
• Compact Size
• Wide Gap
3. Key Parameters :
• Gap Width : 2mm
• Slit Width (detector side): 0.3mm
• Package : 4.5
×
2.6
×
4.5mm
4. RoHS directive compliant
Agency approvals/Compliance
1. Compliant with RoHS directive
Applications
1. General purpose detection of object presence or
motion.
2. Example : printer, lens control for camera
2
Sheet No.: D3-A01201FEN
GP1S097HCZ0F
Internal Connection Diagram
Outline Dimensions
(Unit : mm)
Product mass : approx. 0.07g
Plating material : SnCu (Cu : TYP. 2%)
Top view
(C0.3)
aʻa
4.5
2.6
3.55
2
0.4
2.1
4.5
3.3
(0.75)
2
Center of
light path
(C0.3)
(0.3)
Slit width
(C0.4)
φ1.2
+0
0.1
2.1
±0.5
a-aʼ section
0.15
+0.2
0.1
3 4
2 1
∗∗ ∗∗
• Unspeci ed tolerance : ±0.2mm
• ( ) : Reference dimensions
• The dimensions shown do not include
those of burrs.
Burr's dimensions : 0.15mm MAX.
The dimensions indicated by
refer
to those measured from the lead base.
∗∗
The lead may be exposed at the
shaded portion.
Top view
1
2 1
3 4
2
3
4
Anode
Collector
Emitter
Cathode
Country of origin
Japan
3
Sheet No.: D3-A01201FEN
GP1S097HCZ0F
Absolute Maximum Ratings
Electro-optical Characteristics
(T
a
=
25˚C)
Parameter Symbol Rating Unit
Input
Forward current I
F
50 mA
Reverse voltage V
R
6V
Power dissipation P 75 mW
Output
Collector-emitter voltage
V
CEO
35 V
Emitter-collector voltage
V
ECO
6V
Collector current I
C
20 mA
Collector power dissipation P
C
75 mW
Total power dissipation P
tot
100 mW
Operating temperature T
opr
25 to
+
85 ˚C
Storage temperature T
stg
40 to
+
100 ˚C
1
Soldering temperature T
sol
260 ˚C
1 For 5s or less
(T
a
=
25˚C )
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input
Forward voltage V
F
I
F
=
20mA
1.2 1.4 V
Reverse current I
R
V
R
=
3V
−−
10
μ
A
Output Collector dark current I
CEO
V
CE
=
20V
−−
100 nA
Transfer
charac-
teristics
Collector current I
C
V
CE
=
5V, I
F
=
5mA 100
400
μ
A
Collector-emitter saturation voltage
V
CE(sat)
I
F
=
10mA, I
C
=
40
μ
A
−−
0.4 V
Response time
Rise time t
r
V
CE
=
5V, I
C
=
100
μ
A, R
L
=
1k
Ω
50 150
μ
s
Fall time t
f
50 150
μ
s
1mm or more
Soldering area

GP1S097HCZ0F

Mfr. #:
Manufacturer:
Sharp Microelectronics
Description:
Optical Switches, Transmissive, Phototransistor Output Photointerrupter Sub mini 2.0mm gap
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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