Characteristics STPS41H100C
2/9 Doc ID 8613 Rev 5
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.58 x I
F(AV)
+ 0.0045 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current
T
c
= 50 °C
δ = 0.5
Per diode
Per device
20
A
40
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 220 A
I
RRM
Repetitive peak reverse current t
p
= 2 µs square F= 1 kHz 1 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 18100 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1.5
°C/WTotal 0. 8
R
th(c)
Coupling 0.1
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
10 μA
T
j
= 125 °C 3 10 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C I
F
= 20 A 0.80
V
T
j
= 125 °C I
F
= 20 A 0.62 0.67
T
j
= 25 °C I
F
= 40 A 0.90
T
j
= 125 °C I
F
= 40 A 0.70 0.76
dPtot
dTj
<
1
Rth(j-a)
