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MBRB10100CT-E3/8W

P1-P3P4-P5
MBR1090CT-E3, MBR10100CT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
1
Document Number: 89125
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode High Voltage Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
90 V, 100 V
I
FSM
120 A
V
F
0.75 V
T
J
max. 150 °C
Package TO-220AB
Diode variation Dual common cathode
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
TMBS
®
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Max. repetitive peak reverse voltage V
RRM
90 100 V
Working peak reverse voltage V
RWM
90 100 V
Max. DC blocking voltage V
DC
90 100 V
Max. average forward rectified current at T
C
= 105 °C
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
120 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH per diode E
AS
60 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C per diode I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C
MBR1090CT-E3, MBR10100CT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
2
Document Number: 89125
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR1090CT MBR10100CT UNIT
Maximum instantaneous forward voltage per diode
I
F
= 5.0 A T
C
= 125 °C
V
F
(1)
0.75
V
I
F
= 5.0 A T
C
= 25 °C 0.85
Maximum reverse current per diode at working peak
reverse voltage
T
J
= 25 °C
I
R
(2)
100 μA
T
J
= 100 °C 6.0 mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Typical thermal resistance per diode R
JC
4.4 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR10100CT-E3/4W 1.87 4W 50/tube Tube
0
2
4
6
10
0
50
100
150
8
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
0
20
60
40
100
80
120
1
100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
01 562
4.0
3.5
3.0
2.5
1.0
0.5
0
2.0
1.5
34
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.8
D = 0.5
D = 1.0
D = t
p
/T t
p
T
MBR1090CT-E3, MBR10100CT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
3
Document Number: 89125
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
0 0.2 1.60.4
100
10
0.1
1
0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.01
0.001
0.1
1
10
100
0.0001
200 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
101 100
100
1000
10 000
0.1
10
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
0.01
10 1001
10
0.1
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
P1-P3P4-P5

MBRB10100CT-E3/8W

Mfr. #:
Buy MBRB10100CT-E3/8W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10 Amp 100 Volt Dual TrenchMOS
Lifecycle:
New from this manufacturer.
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