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MM3Z3V9ST1

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 15
1 Publication Order Number:
MM3Z2V4ST1/D
MM3Z2V4ST1 SERIES
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
Tight Tolerance Portfolio
This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand−held portables,
and high density PC boards.
Specification Features:
• Standard Zener Breakdown Voltage Range −
2.4 V to 33 V
• Steady State Power Rating of 200 mW
• Small Body Outline Dimensions:
0.067″ x 0.049″ (1.7 mm x 1.25 mm)
• Low Body Height: 0.035″ (0.9 mm)
• Package Weight: 4.507 mg/unit
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Tight Tolerance V
Z
• Pb−Free Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn only (Pb−Free)
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) @ T
A
= 25°C
Derate above 25°C
P
D
200
1.5
mW
mW/°C
Thermal Resistance from
Junction−to−Ambient
R
q
JA
635 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad.
Device Package Shipping
†
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
Cathode
2
Anode
MM3ZxxxST1 SOD−323 3000/Tape & Reel
MARKING
DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
XX = Specific Device Code
M = Date Code*
G = Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MM3ZxxxST3 SOD−323 10,000/Tape & Reel
MM3ZxxxST1G SOD−323
(Pb−Free)
3000/Tape & Reel
MM3ZxxxST3G SOD−323
(Pb−Free)
10,000/Tape & Reel
1
2
XXMG
G
*Date Code orientation may vary
depending upon manufacturing location.
(Note: Microdot may be in either location)
MM3Z2V4ST1 SERIES
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted,
V
F
= 0.9 V Max. @ I
F
= 10 mA for all types)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Z
Maximum Temperature Coefficient of V
Z
C Max. Capacitance @V
R
= 0 and f = 1 MHz
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
ELECTRICAL CHARACTERISTICS (V
F
= 0.9 Max @ I
F
= 10 mA for all types)
Device*
Device
Marking
Test
Current
Izt mA
Zener Voltage VZ
Z
ZK
I
Z
= 0.5
mA W
Max
Z
ZT
I
Z
= IZT
@ 10%
Mod W
Max
Max
IR @ VR
d
VZ
/dt (mV/k)
@ I
ZT1
= 5 mA
C pF Max @
V
R
= 0
f = 1 MHz
Min Max
mA
V Min Max
MM3Z3V3ST1, G T5 5.0 3.32 3.53 1000 95 5.0 1.0 −3.5 0 450
MM3Z3V9ST1, G T7 5.0 3.89 4.16 1000 90 3.0 1.0 −3.5 −2.5 450
MM3Z4V3ST1, G T8 5.0 4.17 4.43 1000 90 3.0 1.0 −3.5 0 450
MM3Z4V7ST1, G T9 5.0 4.55 4.75 800 80 3.0 2.0 −3.5 0.2 260
MM3Z5V1ST1, G TA 5.0 4.98 5.2 500 60 2.0 2.0 −2.7 1.2 225
MM3Z5V6ST1, G TC 5.0 5.49 5.73 200 40 1.0 2.0 −2.0 2.5 200
MM3Z6V2ST1, G TE 5.0 6.06 6.33 100 10 3.0 4.0 0.4 3.7 185
MM3Z6V8ST1, G TF 5.0 6.65 6.93 160 15 2.0 4.0 1.2 4.5 155
MM3Z7V5ST1, G TG 5.0 7.28 7.6 160 15 1.0 5.0 2.5 5.3 140
MM3Z8V2ST1, G TH 5.0 8.02 8.36 160 15 0.7 5.0 3.2 6.2 135
MM3Z9V1ST1, G TK 5.0 8.85 9.23 160 15 0.5 6.0 3.8 7.0 130
MM3Z10VST1, G WB 5.0 9.80 10.20 160 15 0.5 6.0 4.5 8.0 130
MM3Z12VST1, G TN 5.0 11.74 12.24 80 25 0.1 8.0 6.0 10 130
MM3Z15VST1, G TP 5.0 14.34 14.98 80 40 0.1 11 8.8 12.7 130
MM3Z16VST1, G TU 5.0 15.85 16.51 80 40 0.05 11.2 10.4 14 105
MM3Z18VST1, G TW 5.0 17.56 18.35 80 45 0.05 12.6 12.4 16 100
MM3Z22VST1G WP 5.0 21.54 22.47 100 55 0.05 15.4 16.4 20 85
MM3Z27VST1G WQ 5.0 26.19 27.53 300 80 0.05 18.9 21.4 25.3 70
MM3Z33VST1G WR 5.0 32.15 33.79 300 80 0.05 23.2 27.4 33.4 70
*The “G’’ suffix indicates Pb−Free package available.
MM3Z2V4ST1 SERIES
http://onsemi.com
3
TYPICAL CHARACTERISTICS
V
Z
, NOMINAL ZENER VOLTAGE
Figure 1. Effect of Zener Voltage on
Zener Impedance
103.0
Z
ZT
, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1.0
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
I
Z
= 1 mA
5 mA
V
F
, FORWARD VOLTAGE (V)
Figure 2. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
I
F
, FORWARD CURRENT (mA)
1000
100
10
1.0
150°C
75°C 25°C 0°C
C, CAPACITANCE (pF)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 3. Typical Capacitance
1000
100
10
1.0
104.0
BIAS AT
50% OF V
Z
NOM
T
A
= 25°C
0 V BIAS
1 V BIAS
I
R
, LEAKAGE CURRENT ( A)μ
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 4. Typical Leakage Current
1000
100
10
1.0
0.1
0.01
0.001
0.0001
0.00001
105.00
+150°C
+25°C
−55°C
V
Z
, ZENER VOLTAGE (V)
100
10
1.0
0.1
0.01
108.06.04.02.00
T
A
= 25°C
I
Z
, ZENER CURRENT (mA)
Figure 5. Zener Voltage versus Zener Current
(V
Z
Up to 9 V)
TEMPERATURE (°C)
250
100
40
20
0
POWER DISSIPATION (%)
50 75 100 125 150
80
60
Figure 6. Steady State Power Derating
P1-P3P4-P4

MM3Z3V9ST1

Mfr. #:
Buy MM3Z3V9ST1
Manufacturer:
ON Semiconductor
Description:
Zener Diodes ZEN REG 0.2W TR
Lifecycle:
New from this manufacturer.
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