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VS-MBRS340-M3/9AT

P1-P3P4-P6P7-P7
VS-MBRS340-M3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
1
Document Number: 95748
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 3.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRS340-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package SMC
I
F(AV)
3.0 A
V
R
40 V
V
F
at I
F
0.43 V
I
RM
max. 35 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
6.0 mJ
Cathode Anode
DO-214AB (SMC)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 3.0 A
V
RRM
40 V
I
FSM
t
p
= 5 μs sine 1580 A
V
F
3.0 A
pk
, T
J
= 125 °C 0.43 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS340-M3 UNITS
Maximum DC reverse voltage V
R
40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 118 °C, rectangular waveform 3.0
A
50 % duty cycle at T
L
= 110 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1580
10 ms sine or 6 ms rect. pulse 80
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.0 A, L = 12 mH 6 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-MBRS340-M3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
2
Document Number: 95748
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
3 A
T
J
= 25 °C
0.525
V
6 A 0.68
3 A
T
J
= 125 °C
0.43
6 A 0.57
Maximum reverse leakage current I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2.0
mAT
J
= 100 °C 20
T
J
= 125 °C 35
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 230 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 3.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation
12
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
46
Approximate weight
0.24 g
0.008 oz.
Marking device Case style SMC (similar to DO-214AB) 34
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-MBRS340-M3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
3
Document Number: 95748
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
0.1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
1000
10 000
100
10
100 000
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
10
20 40
300
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105
15 20 25 35
40 4530
0
T
J
= 25 °C
0.1
1.0
10
100
0.00001
0.0001
0.001
0.01
0.1
1.0
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-MBRS340-M3/9AT

Mfr. #:
Buy VS-MBRS340-M3/9AT
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 3A 40V Single Die Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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