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ZVN3310FTC

P1-P3P4-P5
ZVN3310F
Document Number DS31980 Rev. 4 - 2
1 of 5
www.diodes.com
October 2009
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Product Line o
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Diodes Incorporated
ZVN3310F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
DS
(V)
100
R
DS
(
ON
)
(Ω)
10
Description and Applications
This MOSFET utilises a structure that combines low input
capacitance with relatively low on-resistance and has an intrinsically
higher pulse current handling capability in linear mode than a
comparable trench technology structure. This MOSFET is suitable for
general purpose applications.
• General purpose 100V FET
• Power management
• Disconnect switches
• Telecoms
• Complementary Type – ZVP3310F
Features and Benefits
• High pulse current handling in linear mode
• Low input capacitance
• Fast switching speed
• Lead Free By Design/RoHS Compliant (Note 1)
Mechanical Data
• Case: SOT-23
• Case Material: UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 2)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZVN3310FTA MF 7 8 3000
Notes: 1. No purposefully added lead.
2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MF = Product Type Marking Code
TOP VIEW
D
G
S
TOP VIEW
Pin Out Confi
g
uration
MF
SOT-23
E
q
uivalent Circuit
Source
Gate
Drain
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ZVN3310F
Document Number DS31980 Rev. 4 - 2
2 of 5
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October 2009
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ZVN3310F
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
100 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current
I
D
100 mA
Pulsed Drain Current
I
DM
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @T
A
= 25°C P
D
330 mW
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
⎯ ⎯
V
I
D
= 1mA, V
GS
= 0V
Zero Gate Voltage Drain Current T
J
= 25°C
T
J
= 125°C (Note 4)
I
DSS
⎯ ⎯
1
50
μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
20 nA
V
GS
= ±20V, V
DS
= 0V
Gate Threshold Voltage
V
GS
(
th
)
0.8
⎯
2.4 V
V
DS
= V
GS
, I
D
= 1mA
ON CHARACTERISTICS (Note 3)
On-State Drain Current
I
D
(
ON
)
500
⎯ ⎯
mA
V
DS
= 25V, V
GS
= 10V
Static Drain-Source On-Resistance
R
DS
(
ON
)
⎯ ⎯
10 Ω
V
GS
= 10V, I
D
= 500mA
DYNAMIC CHARACTERISTICS (Note 4)
Forward Transconductance (Note 3) g
fs
100
⎯ ⎯
mS
V
DS
= 25V, I
D
= 500mA
Input Capacitance
C
iss
⎯ ⎯
40
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯ ⎯
15
Reverse Transfer Capacitance
C
rss
⎯ ⎯
5
Turn-On Delay Time (Note 5)
t
D
on
⎯
3 5
ns
V
DD
≈ 25V, I
D
= 500mA
Turn-On Rise Time (Note 5)
t
r
⎯
5 7
Turn-Off Delay Time (Note 5)
t
D
off
⎯
4 6
Turn-Off Fall Time (Note 5)
t
f
⎯
5 7
Notes: 3. Measured under pulsed conditions. Width = 300μs. Duty cycle ≤2%
4. Sample test.
5. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
ZVN3310F
Document Number DS31980 Rev. 4 - 2
3 of 5
www.diodes.com
October 2009
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZVN3310F
P1-P3P4-P5

ZVN3310FTC

Mfr. #:
Buy ZVN3310FTC
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Chnl 100V
Lifecycle:
New from this manufacturer.
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